MDS60L Allicdata Electronics
Allicdata Part #:

MDS60L-ND

Manufacturer Part#:

MDS60L

Price: $ 166.35
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS RF BIPO 120W 4A 55AW1
More Detail: RF Transistor NPN 65V 4A 1.03GHz ~ 1.09GHz 120W Ch...
DataSheet: MDS60L datasheetMDS60L Datasheet/PDF
Quantity: 1000
50 +: $ 151.22300
Stock 1000Can Ship Immediately
$ 166.35
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.03GHz ~ 1.09GHz
Noise Figure (dB Typ @ f): --
Gain: 10dB
Power - Max: 120W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
Current - Collector (Ic) (Max): 4A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55AW
Supplier Device Package: 55AW
Description

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MDS60L is a type of bipolar junction transistor (BJT). It belongs to the RF (radio frequency) classification. This type of transistor is mostly used in manufacturing of various amplifiers and oscillators. It can also be used in low frequency and some intermediate frequency (IF) applications. The device is available in various packages like SOT883, TO-254 and TO-247.

The MDS60L is designed to be used as an amplifier in radio and satellite communications. It is typically used in the 50 to 500 MHz range, making it a popular choice for applications that require a high gain and stability. The device\'s design ensures that it has a high degree of linearity, making it ideal for use in linear amplifier systems. Its high level of noise suppression also helps to reduce unwanted signals and interference in the amplification process.

The transistor is also used in low and intermediate frequency applications. Its low capacitance and excellent barrier breakdown voltage make it suitable for use in oscillators. These oscillators can be used for transmitting and receiving signals, making them essential components in radio and communication systems. By using two or more of these transistors in a single circuit, the device can be used to supply signals to various other components within the system.

The MDS60L operates in both Class A and Class B amplifier modes, allowing it to be used in a wide range of applications. It has a high gain-bandwidth and provides an excellent power efficiency. This makes the device an excellent choice for applications that require both power efficiency and high levels of linearity. Also, it has very low input and output capacitance levels, making it suitable for use in circuits with high frequency signals and limited bandwidth.

One of the main advantages of the MDS60L device is its high output power. It can easily provide power levels of up to 40 dBm and can also be used for supply signals in Class A and Class B amplifier systems. Its high power capability makes it an ideal choice for applications where high performance and reliability are desired.

The working principle and application field of the MDS60L are quite simple and can be understood without much difficulty. Its high level of linearity and power output make it an ideal device for use in radio and communication systems. Its low capacitance and excellent barrier breakdown voltage make it suitable for use in oscillators and other types of RF amplifiers. It is available in various packages and can be used in a range of applications. Its high power and linearity combined with its low capacitance make it an excellent choice for use in a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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