MDS70 Allicdata Electronics
Allicdata Part #:

MDS70-ND

Manufacturer Part#:

MDS70

Price: $ 104.21
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS RF BIPO 225W 5A 55CX1
More Detail: RF Transistor NPN 65V 5A 1.03GHz ~ 1.09GHz 225W Ch...
DataSheet: MDS70 datasheetMDS70 Datasheet/PDF
Quantity: 1000
50 +: $ 94.73030
Stock 1000Can Ship Immediately
$ 104.21
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.03GHz ~ 1.09GHz
Noise Figure (dB Typ @ f): --
Gain: 10.3dB ~ 11.65dB
Power - Max: 225W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
Current - Collector (Ic) (Max): 5A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55CX
Supplier Device Package: 55CX
Description

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The MDS 70 is an RF bipolar transistor which exhibits better performance than other commercially available power transistors. This device is ideal for applications where high power performance and a wide operating temperature range are required. It uses a single-gate evaluation structure which helps maximize power and performance. The device is made with a high frequency N-channel silicon field effect transistor (FET) with an excellent frequency response and high transconductance. It is suitable for many different types of applications, including radio frequency amplifiers, digital filters, and high-voltage DC/DC power supplies.

The application field of the MDS 70 includes radio frequency (RF) power amplifiers and transmitters, high voltage power supplies, and high-speed digital filters. In terms of RF applications, the influence of the gate-drain resistance and multi-device interaction on the performance of the efficient transistor is also limited which ensures good performance in high-frequency applications. Its excellent frequency response makes it suitable for applications such as frequency modulation (FM) transmitters, and direct conversion transceivers. The MDS 70 also offers superior performance in high-voltage power supplies and high-speed digital filters.

The working principle of the MDS 70 is based on the high frequency FET technology. This technology is a combination of the traditional bipolar junction transistors (BJTs) and field effect transistors (FETs). In high-frequency applications, FETs, rather than BJTs, are used instead of BJTs. The FETs operate by modulating the gate current which controls the drain current of the transistor. In this type of design, the transistor’s transconductance is maximized, which increases the power and performance of the transistor.

The MDS 70 is an excellent choice of transistor when performance and a wide operating temperature range are needed. Its excellent frequency response and high transconductance make it a suitable choice for many types of high frequency applications. Its gates-drain resistance and multi-device interaction also make it a good choice for use in high voltage power supplies and high-speed digital filters. The combination of BJTs and FETs make it a great choice for RF power amplifiers and transmitters. It is an excellent transistor for any application where performance, high power, and a wide operating temperature range are needed.

The specific data is subject to PDF, and the above content is for reference

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