MDS800 Allicdata Electronics
Allicdata Part #:

MDS800-ND

Manufacturer Part#:

MDS800

Price: $ 382.16
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS RF BIPO 1458W 60A 55ST1
More Detail: RF Transistor NPN 65V 60A 1.09GHz 1458W Chassis Mo...
DataSheet: MDS800 datasheetMDS800 Datasheet/PDF
Quantity: 1000
25 +: $ 347.41100
Stock 1000Can Ship Immediately
$ 382.16
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.09GHz
Noise Figure (dB Typ @ f): --
Gain: 8.6dB
Power - Max: 1458W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
Current - Collector (Ic) (Max): 60A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55ST-1
Supplier Device Package: 55ST-1
Description

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The MDS800 is the latest advancement in semiconductor technology known as a Bipolar Junction Transistor (BJT). The BJT, which is generally regarded as the most versatile transistor device in the industry, has been used for many years in applications such as radiofrequency (RF) communication, audio, and power switching. The MDS800 is specifically targeted for use in RF circuits and is designed to operate over a broad frequency range with very high linearity and efficiency.The main characteristics of BJTs include their low voltage drop, low power dissipation, and low on resistance. These features enable the MDS800 to be used in a wide variety of circuits with high efficiency and low power consumption. The MDS800 is specifically designed for use in RF circuits where the frequency of operation may reach beyond a few gigahertz.The MDS800 is a highly integrated BJT device with a wide range of applications for RF circuits. The MDS800 is a heterojunction bipolar transistor device, which consists of a base, a collector, and an emitter. The base is the active region of the device and serves as the connection point between the collector and the emitter. The MDS800 is made from a special semiconductor material which is highly optimized for operation at RF frequencies.The basic operating principle of a BJT device, such as the MDS800, is based on the controlled flow of electrons between the collector and the emitter. When a small current is passed through the base region, the current between the collector and emitter increases, producing an amplified output. This amplified output is then used to power various types of RF devices.In addition to its use as a power amplifier in an RF circuit, the MDS800 can also be used as an oscillator. An oscillator is used to create continuous oscillations at a certain frequency. The MDS800 is an ideal choice for this application since it is capable of producing frequencies in the range of several hundred to several thousand MHz.In addition to its use as an oscillator, the MDS800 can also be used in a wide variety of other applications including linear amplifiers, signal processors, high frequency switching circuits, and antenna systems. The MDS800 is a great choice for applications in the RF range and is highly regarded for its low power consumption, high efficiency, and excellent linearity.

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