MF200K04F4-BP

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The MF200K04F4-BP is an epitaxial Mini DFN (Dual Flat No lead) packaged Schottky barrier rectifier diode array that is manufactured by ON Semiconductor. It is designed for low voltage, high frequency rectification and provides an extremely low forward voltage drop. The MF200K04F4-BP diode is suitable for a variety of applications, including automotive, consumer electronics, and power systems.

Features:

• Very low forward voltage drop
• Low reverse leakage current
• 8.6 V reverse voltage
• Low capacitance protecting ESD sensitive components
• Small mini DFN package
  

Applications:

• Equalization of cells in Li-ion batteries
• DC–DC converter.
• Wireless charging.
• DC-DC converters in adapter and charger
• Overvoltage protection systems
• Overcurrent protection systems

Working Principle:

The MF200K04F4-BP consists of four independent Schottky barrier diodes that are arranged in a dual flat, no-lead (DFN) package. The diode is made from an N-epitaxial layer that is formed on a P-type substrate. The Schottky barrier is formed when a metal layer contacts the P-material. This structure typically has a lower forward voltage (Vf) than a PN junction, resulting in much lower power losses in the circuit. The reverse voltage rating of the diode (VR) is quite low, and the reverse leakage current (IR) is typically very low, making it suitable for low voltage applications.

Since the Schottky barrier is formed when two different materials come into contact, the barrier forms a depletion region between the two materials. This region causes the diode to act as a one-way switch and only allows current to flow through the diode when it is forward biased. When the diode is forward biased, the electrons in the N-material are repelled by the electric field and jump across the barrier to the P-material. In this state, the diode is said to be “on” and allows current to flow.

When the diode is reverse biased, the forward electric field is reduced and the electrons are not able to cross the barrier. In this state, the diode is said to be “off” and does not allow any current to flow. The reverse breakdown voltage (Vbr) of the diode is the voltage at which the diode begins to allow current to flow in the reverse direction.

In summary, the MF200K04F4-BP is an ideal diode for low voltage, high frequency rectification due to its combination of low forward voltage drop and low reverse leakage current. It is suitable for a variety of applications, such as equalizing cells in Li-ion batteries, DC-DC converters, wireless charging, overvoltage and overcurrent protection systems.

The specific data is subject to PDF, and the above content is for reference