MG200J6ES61 Allicdata Electronics
Allicdata Part #:

MG200J6ES61-ND

Manufacturer Part#:

MG200J6ES61

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Powerex Inc.
Short Description: IGBT MOD CMPCT 600V 200A
More Detail: IGBT Module Three Phase Inverter 600V 200A 1000W ...
DataSheet: MG200J6ES61 datasheetMG200J6ES61 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: IGBTMOD™
Part Status: Obsolete
IGBT Type: --
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 200A
Power - Max: 1000W
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 200A
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 40nF @ 10V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -20°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

An MG200J6ES61 is a high power IGBT module of the N-series made by Toshiba.

IGBT stands for Insulated Gate Bipolar Transistor. It is a three-terminal electrical device formed from a combination of a MOSFET (metal-oxide-semiconductor field-effect transistor) and a bipolar junction transistor. IGBTs have a wide range of potential applications in the electrical industry, as they have the advantage of being able to conduct large currents and switch at high speeds, yet still have lower power losses than traditional power semiconductors.

The MG200J6ES61 is classified as a short circuit rated (SCR), high power, insulated gate bipolar transistor module. It is available in a variety of different heat sink sizes and has an operating temperature range of -40°C to 125°C. This IGBT module has a continuous collector current rating of 200A and a peak collector current of up to 600A. It also has a maximum collector-emitter voltage of 600V.

The working principle of an IGBT is quite simple. A voltage is applied to the gate of the transistor which creates an electric field between the gate and the base. This electric field changes the character of the transistor from an insulator to a conductor. This enables current to pass between the collector and the emitter. When the voltage is removed, the transistor returns to an insulating state.

The MG200J6ES61 is a versatile IGBT module with a wide range of applications in industrial and commercial sectors. It can be used in the power supply of various electronic systems, such as motor control, switching, and inverter applications. It is also suitable for use in welding applications, as well as general power supplies. Additionally, this IGBT module can be used in railway systems and solar energy applications.

The MG200J6ES61 is an excellent choice for high-power applications due to its high current, low power loss, and high-speed switching. Its robust design makes it a reliable and long-lasting solution for many different electrical applications. With its versatility and reliable performance, the MG200J6ES61 is an invaluable addition to your industrial component inventory.

The specific data is subject to PDF, and the above content is for reference

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