Allicdata Part #: | MG600Q2YS60A-ND |
Manufacturer Part#: |
MG600Q2YS60A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Powerex Inc. |
Short Description: | IGBT MOD CMPCT 1200V 600A |
More Detail: | IGBT Module Half Bridge 1200V 600A 4300W Chassis ... |
DataSheet: | MG600Q2YS60A Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | IGBTMOD™ |
Part Status: | Obsolete |
IGBT Type: | -- |
Configuration: | Half Bridge |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 600A |
Power - Max: | 4300W |
Vce(on) (Max) @ Vge, Ic: | 3.1V @ 15V, 600A |
Current - Collector Cutoff (Max): | 1mA |
Input Capacitance (Cies) @ Vce: | 41nF @ 10V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -20°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
MG600Q2YS60A Application Field and Working Principle
Transistors - IGBTs - Modules
The MG600Q2YS60A IGBT module is provided as a highly reliable and efficient power semiconductor switch that is designed to save energy and reduce losses in motor drives and power converters. This IGBT module is designed for applications that require high power density and very robust power conversion integrated circuits (ICs). This article will discuss the application field of MG600Q2YS60A IGBT modules and their working principle.
Application Field
MG600Q2YS60A IGBT modules are designed for motor drive power conversion applications. This IGBT module has a wide range of applications that include dc/dc converters, AC/DC converters, UPS systems, servo systems, high voltage conversion, and many more.
The MG600Q2YS60A is ideal for power conversion applications where space constraint is a major consideration. It is also ideal for applications that require high switching frequency, high voltage blocking capability, and low switching losses. This IGBT module is also well-suited for applications that require high reliability and strong overload capability.
Working Principle
The working principle of the MG600Q2YS60A is based on IGBTs (Insulated Gate Bipolar Transistors). IGBTs consist of two separate components- MOSFETs and bipolar transistors. The MOSFETs control the power switching process and the bipolar transistors act as a current conduction device. The two components are connected in series and are able to bridge the power gap between the power and supply sides of the circuit.
The IGBTs used in the MG600Q2YS60A are insulated gate-bipolar transistors (IGBTs). They are MOSFETs with an additional bipolar transistors section which is used for current conduction when the MOSFET is in the off-state. The IGBTs have a high degree of immunity to transient and reactive power, making them ideal for high voltage power conversion applications.
The MG600Q2YS60A is designed to provide high performance power conversion and excellent reliability. The IGBTs used in this module offer high speed switching operation, low switching losses, high immunity to noise and reverse voltage, and high current capacity. All these features make the MG600Q2YS60A a perfect solution for applications that require high performance and reliable power conversion.
The specific data is subject to PDF, and the above content is for reference
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