Allicdata Part #: | MG800J2YS50A-ND |
Manufacturer Part#: |
MG800J2YS50A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Powerex Inc. |
Short Description: | IGBT MOD CMPCT 600V 800A |
More Detail: | IGBT Module Half Bridge 600V 800A 2900W Chassis M... |
DataSheet: | MG800J2YS50A Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | IGBTMOD™ |
Part Status: | Obsolete |
IGBT Type: | -- |
Configuration: | Half Bridge |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 800A |
Power - Max: | 2900W |
Vce(on) (Max) @ Vge, Ic: | 3V @ 15V, 800A |
Current - Collector Cutoff (Max): | 1mA |
Input Capacitance (Cies) @ Vce: | 93nF @ 10V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -20°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The MG800J2YS50A is an IGBT module designed for many different applications. This IGBT features a 50A current that can provide up to 5MHz frequency in a very small package. It is suitable for converter, inverter, motor control, and other applications where high-speed and high current switching is needed. The MG800J2YS50A is also capable of reducing power losses, as well as providing greater efficiency, in such applications. The product is available with a three-phase bridge in full-bridge and half-bridge configurations. This allows for the conversion of AC input to DC output.
The MG800J2YS50A is an insulated-gate bipolar transistor (IGBT) module. It consists of a gate structure and an emitter region that crosses a p-type substrate and shares a common emitter region. This IGBT module uses a trench and field-stop process to reduce the on-resistance and production of thermal strain during operation. It also features a fast switching speed, low power losses and higher efficiency. The MG800J2YS50A has a low output capacitance, which helps to optimise the efficiency and improves the overall performance of an application. Furthermore, the integrated gate protection functions also assist in protecting the device from over-current, overvoltage, reverse voltage and short circuit.
The working principle of an IGBT module is based on its ability to switch between an “on” state and an “off” state. In the “on” state, the IGBT module is in a conducting position, allowing the flow of current. In the “off” state, the IGBT module is in a non-conducting position, hindering the flow of current. This switching process between the two states is defined by the gate voltage or current supplied to the device, which is controlled by the user/designer. The switching speed of an IGBT module also depends on the applied gate voltage and current, with higher voltages and currents resulting in faster switching times.
The MG800J2YS50A IGBT module is designed to provide a number of useful features in a variety of applications. Its features make it extremely efficient and provide improved performance in converter and inverter designs, as well as motor control applications. The integrated protection functions also add to its safety, ensuring that the device is never compromised under any conditions. Therefore, the MG800J2YS50A is an ideal choice for many applications that require high-speed, high current switching with reduced power losses and greater efficiency.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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MG800J2YS50A | Powerex Inc. | 0.0 $ | 1000 | IGBT MOD CMPCT 600V 800AI... |
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