MGA-71543-TR2G

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As an RF amplifier, the MGA-71543-TR2G is a wideband amplifier that achieves high power gains over a range of frequency bands. The device has been designed to operate in the 900 MHz to 1.7 GHz frequency range. It is based on the latest gallium nitride (GaN) semiconductor technology and offers elevated power levels, high linearity and high gain in a compact 2 mm by 2 mm package. It can be used in a range of applications such as cellular infrastructure, point-to-point radio, small cells, microwave backhaul, and satellite communication.

The MGA-71543-TR2G contains two amplifiers with a different output performance. The first amplifier has a 28 dB typical gain and provides greater than 30 dBm recommend of output power. The second amplifier has a 27 dB gain with a greater than 27 dBm recommended output power. This device is capable of achieving very high efficiency which is typical of GaN semiconductor technology.

The MGA-71543-TR2G also has a very high linearity of greater than 42 dBm P1dB compression point and 0.8:1 peak-to-avellage power ratio. This allows it to perform effectively in networks with higher level of spectral regrowth and suppressed out-of-band interference. This product is packaged in the smallest and most reliable 2 mm by 2 mm surface mount package and is suitable for high speed automated assembly meets the RoHS and REACH requirements.

The working principle of the MGA-71543-TR2G is based on a two-stage amplification process. In the first stage, the device uses two cascaded amplifiers to boost signal strength up to 28 dB with a gain flattening of 0.2 dB. The second stage includes two additional amplifiers, further boosting the gain to 27 dB. This two-stage structure eliminates the need for large external components and helps reduce the overall size and cost of the system.

The MGA-71543-TR2G has a wide range of applications, including cellular infrastructure, point-to-point radio, small cells, microwave backhaul, and satellite communication. It can be used to improve signal quality and reduce noise and distortion in radio systems. This product also allows designers to create state-of-the-art RF systems that are more reliable and cost-effective.

To ensure the longevity of the MGA-71543-TR2G, it has been designed with advanced thermal management features. Its aluminum nitride substrate helps dissipate heat quickly and evenly, reducing the risk of damage due to overheating. In addition, the device has a high-temperature soldered frame to protect it from any potential thermal stress.

In conclusion, the MGA-71543-TR2G is a wideband amplifier that is suitable for a variety of applications. With its high gain, linearity, and reduced size, this device has become the ideal solution for a range of RF systems. Its GaN semiconductor technology offers the highest power and efficiency available, and the advanced thermal management ensures that it stays within its optimal operating conditions.

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