MGA-785T6-TR2G

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

RF amplifiers have been playing an increasing role in modern wireless communication. As the demand for higher speed communication systems increases, the need for RF amplifiers to achieve high gain, linearity and noise figure becomes critical. The MGA-785T6-TR2G is a RF power amplifier designed to meet the challenges of these next-generation systems. It offers excellent gain, linearity and noise figure in a cost-effective solution. It is a high power, high efficiency linear amplifier that is suitable for a wide range of applications including cellular, satellite, and RFID systems.

The MGA-785T6-TR2G is a two-stage amplifier that uses a combination of bipolar transistors and field-effect transistors (FETs). The device is tuned for maximum gain and linearity. It operates on inputs as low as -60 dBm, and at frequencies from 100 to 6000 MHz. The device has excellent gain, with typical values up to 62.5 dB at 1400 MHz, and up to 72.5 dB at 6000 MHz. It also provides good linearity, with third-order intercept points (IP3) of greater than 60 dBm at 1400 MHz. The device presents 50 ohms input and output impedances, and has an input port power of 4 dBm (1.0).

The MGA-785T6-TR2G is designed to operate over a wide bias voltage range, and offers enhanced thermal performance due to its low junction-to-case thermal resistance. In addition, its integrated matching circuitry offers low insertion loss and excellent emission performance. As a result, the device can be used in applications with high transmit power requirements, such as LTE, WiMAX, and broadband networks.

The MGA-785T6-TR2G is designed to operate efficiently over a wide temperature range. It has a high power efficiency of greater than 55%, and can deliver up to 30 Watts of output power. The device is available in die and package form for use in the most demanding applications. It is also protected against electrostatic discharge (ESD) damage.

At its core, the MGA-785T6-TR2G is a two-stage amplifier that accepts an input signal and amplifies it to generate a more powerful output signal. The input and output matching circuitry ensures the amplifier operates with maximum gain and linearity, while the bias circuitry ensures that the device operates efficiently over a wide range of temperatures and input powers. The integrated ESD protection circuitry ensures the device will not be damaged by ESD events.

The MGA-785T6-TR2G is suitable for a variety of applications that require high gain, linearity and efficiency. It is an ideal choice for applications such as cellular base stations, satellite earth stations, point-to-point microwave systems, and RFID reader systems.

The MGA-785T6-TR2G is an excellent choice for a wide variety of RF applications that require high performance and reliability. It offers excellent gain, linearity, and efficiency in a cost-effective solution. Its high output power, excellent ESD protection, and wide operating temperature range make it an ideal solution for next-generation communications systems.

The specific data is subject to PDF, and the above content is for reference