| Allicdata Part #: | MGD623S-ND |
| Manufacturer Part#: |
MGD623S |
| Price: | $ 1.74 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Sanken |
| Short Description: | IGBT 600V 50A 150W TO3P |
| More Detail: | IGBT 600V 50A 150W Through Hole TO-3P |
| DataSheet: |  MGD623S Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| 2000 +: | $ 1.58760 |
| Power - Max: | 150W |
| Supplier Device Package: | TO-3P |
| Package / Case: | TO-3P-3 Full Pack |
| Mounting Type: | Through Hole |
| Operating Temperature: | 150°C (TJ) |
| Reverse Recovery Time (trr): | 300ns |
| Test Condition: | 300V, 50A, 39 Ohm, 15V |
| Td (on/off) @ 25°C: | 75ns/300ns |
| Input Type: | Standard |
| Switching Energy: | -- |
| Series: | -- |
| Vce(on) (Max) @ Vge, Ic: | 2.4V @ 15V, 50A |
| Current - Collector Pulsed (Icm): | 100A |
| Current - Collector (Ic) (Max): | 50A |
| Voltage - Collector Emitter Breakdown (Max): | 600V |
| IGBT Type: | -- |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Bulk |
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The MGD623S is a IGBT transistor in the single family category. This semiconductor device has a wide range of applications and can be used in several different scenarios.
The MGD623S device is able to work at high temperatures (up to 150°C). It is also very reliable, and provides accurate and efficient power conversion. This device can be used in most types of electronic circuits, providing a great amount of power and flexibility.
TheMGD623S has a low turn-off voltage and a high collector/emitter breakdown voltage, making it one of the most popular IGBT transistors in the market. This device is mainly used in industrial or commercial electronic devices, due to its great efficiency, reliability and power handling.
The MGD623S works with a power MOSFET structure, meaning that the collector has four diodes designed to provide high current switching and signal transmission. The gate is charged and discharged through the source gate terminal, which allows for greater control.
The working principle of the MGD623S involves power MOSFET structure. Essentially, this device acts like a switch, controlling the amount of power delivered to the load. The voltage applied at the gate controls the drain to source current that is transferred to the load.
When the voltage applied at the gate is less than the turn-off voltage, the device turns off and no current flows. This helps to minimize power losses in the system. When the voltage at the gate reaches the turn-on voltage, the device is activated, and the current flows to the load.
The MGD623S is used in a variety of power management, motor control, and switching applications such as UPS systems, LED lighting, and electrical vehicles. It can also be used in power converters and power supplies, as well as other applications requiring efficient and reliable power delivery.
In conclusion, the MGD623S is a highly versatile and reliable IGBT transistor in the single family category. It is suitable for industrial and commercial applications, due to its great performance and efficiency. Its working principle is based on a power MOSFET structure, which helps to minimize power losses in the system. The device is widely used in power management, motor control, and different types of switching applications.
The specific data is subject to PDF, and the above content is for reference
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