MIAA15WE600TMH Allicdata Electronics
Allicdata Part #:

MIAA15WE600TMH-ND

Manufacturer Part#:

MIAA15WE600TMH

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MODULE IGBT CBI
More Detail: IGBT Module NPT Three Phase Inverter with Brake 60...
DataSheet: MIAA15WE600TMH datasheetMIAA15WE600TMH Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
IGBT Type: NPT
Configuration: Three Phase Inverter with Brake
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 23A
Power - Max: 80W
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Current - Collector Cutoff (Max): 600µA
Input Capacitance (Cies) @ Vce: 0.7nF @ 25V
Input: Single Phase Bridge Rectifier
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: MiniPack2
Supplier Device Package: MiniPack2
Description

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A MIAA15WE600TMH module is a type of power semiconductor device that acts as an insulated gate bipolar transistor (IGBT). It is also referred to as a modular IGBT, and is used in power electronics applications.

The module is made up of two different chips—an IGBT and a diode module. The IGBT chip is the primary component, and it is the component that controls the switching of the device. The diode module is used to limit the amount of reverse polarity that can flow through the device. The module is designed to be used in a variety of switching applications, such as motor drives, inverters, controllers, lighting systems, and power supplies.

The MIAA15WE600TMH is a high-powered, isolated gate bipolar junction transistor in an industry-standard TO-220 package. It has an isolated gate design to reduce electrical noise, and it has an isolated collector configuration to reduce switching losses. The device has an operating temperature range of -40°C to +150°C, and it is rated for a maximum collector-emitter voltage of 600V. The device also has a low conduction loss and a low power rating, making it an efficient choice for power conversion applications.

The working principle of the MIAA15WE600TMH module is based on the principles of bipolar junction transistor (BJT) technology. Its purpose is to allow current to flow through the transistor when a voltage is applied to the gate. The IGBT is a three-terminal device, and its gate terminal is used to control the flow of current. When a positive voltage is applied to the gate terminal, the transistor is turned on and current flows from the collector to the emitter. When a negative voltage is applied to the gate terminal, the transistor is turned off and current does not flow. This is how the module is used to switch power in various applications.

The MIAA15WE600TMH module is used in a wide variety of power electronics applications, such as motor drives, inverters, and lighting systems. It is also used in UPS systems and in solar inverters. Additionally, the device is used in a range of higher-power applications, such as power supplies and electric vehicle applications. The module is reliable and efficient, and it can be used in a variety of power conversion applications.

The specific data is subject to PDF, and the above content is for reference

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