MID550-12A4 Allicdata Electronics
Allicdata Part #:

MID550-12A4-ND

Manufacturer Part#:

MID550-12A4

Price: $ 101.75
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOD IGBT RBSOA 1200V 670A Y3-DCB
More Detail: IGBT Module NPT Single 1200V 670A 2750W Chassis Mo...
DataSheet: MID550-12A4 datasheetMID550-12A4 Datasheet/PDF
Quantity: 1000
2 +: $ 92.50010
Stock 1000Can Ship Immediately
$ 101.75
Specifications
Current - Collector Cutoff (Max): 21mA
Base Part Number: MID
Supplier Device Package: Y3-DCB
Package / Case: Y3-DCB
Mounting Type: Chassis Mount
Operating Temperature: 150°C (TJ)
NTC Thermistor: No
Input: Standard
Input Capacitance (Cies) @ Vce: 26nF @ 25V
Series: --
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 400A
Power - Max: 2750W
Current - Collector (Ic) (Max): 670A
Voltage - Collector Emitter Breakdown (Max): 1200V
Configuration: Single
IGBT Type: NPT
Part Status: Active
Description

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MID550-12A4, classified as Transistors - IGBTs - Modules, is an insulated gate bipolar transistor. It is utilized as a power switching component for switching devices with high currents and voltages, such as UPS systems, induction heating and all kinds of AC motor control that require fast switching speed, low switching losses, and strong surge capability.

MID550-12A4 combines fast, low loss IGBT chips with a planar insulated gate turn off transistor (IGT), which provides fast response and high-peak current-handling capability for high-performance applications. It has a saturation voltage of 0.85V, a breakdown voltage of 1200V, and a current limit of 13A.

Working Principle

MID550-12A4 is an insulated gate bipolar transistor, which utilizes a three-layer semiconductor structure formed by an emitter, both an anode and cathode together forming a collector, and a gate. When voltage is applied to the gate, electrical charge carriers (generally electrons and/or holes) are attracted or repelled, respectively, which creates a conducting path between the emitter and the collector.

When a current is passed through the device, the collector-emitter voltage increases rapidly, which causes a voltage gradient between the collector-emitter and the gate. The gradient results in a flow of more carriers from the emitter to the collector, and this amplifies the current. The amplified current then passes through the collector-emitter and is then utilized for its intended application, like powering a motor.

Application Field

Insulated Gate Bipolar Transistors (IGBTs) such as the MID550-12A4 can be used in a variety of applications. It is suited for applications where fast switching speeds, low losses, and high surge currents are required.

MID550-12A4 is widely used in power electronics applications such as inverters, UPS systems, household appliances, medical equipment, railway traction, and solar energy systems. It can also be used in welding, induction heating and all kinds of AC motor control applications.

It is also a popular choice for power converters and battery charging systems, because of its good thermal resistance and energy efficiency. In addition, it can be used in all types of power modules, like PFC and UPS rectifiers, three-phase AC-AC and DC-DC, etc. Its reliable and efficient performance makes it ideal for all kinds of industrial motors.

Conclusion

MID550-12A4 is a specialty insulated gate bipolar transistor designed for high-power applications. It is able to switch high currents and voltages with fast switching speed, low losses, and strong surge capability. It is widely used in power electronics applications like inverters and all kinds of AC motor control applications. Its reliable and efficient performance makes MID550-12A4 a suitable choice in all kinds of industrial motors.

The specific data is subject to PDF, and the above content is for reference

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