Allicdata Part #: | MIEB101W1200EH-ND |
Manufacturer Part#: |
MIEB101W1200EH |
Price: | $ 95.75 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | IGBT MODULE 1200V 183A HEX |
More Detail: | IGBT Module Three Phase Inverter 1200V 183A 630W ... |
DataSheet: | MIEB101W1200EH Datasheet/PDF |
Quantity: | 1000 |
5 +: | $ 87.04990 |
Series: | -- |
Part Status: | Active |
IGBT Type: | -- |
Configuration: | Three Phase Inverter |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 183A |
Power - Max: | 630W |
Vce(on) (Max) @ Vge, Ic: | 2.2V @ 15V, 100A |
Current - Collector Cutoff (Max): | 300µA |
Input Capacitance (Cies) @ Vce: | 7.43nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 125°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | E3 |
Supplier Device Package: | E3 |
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.MIEB101W1200EH Application Field and Working Principle
The MIEB101W1200EH is a High Power Module with an IGBT based Insulated Gate Bipolar Transistor (IGBT) technology. MIEB101W1200EH IGBT modules are often used in switch mode power supplies and electric motor controls due to their low conduction loss and fast switching speeds. Specifically, the MIEB101W1200EH IGBT technology is suitable for high power applications such as machine drives, UPS systems, high current switching and industrial controls. In addition, the MIEB101W1200EH can also be used for controlling AC or DC drives, low voltage applications and high speed combined gate drive.
Working Principle
The MIEB101W1200EH is based on Insulated Gate Bipolar Transistor (IGBT) technology. It operates using three terminals, the Emitter, Gate and Collector. With an applied voltage to the Gate terminal, electrons are driven into the IGBT creating an inversion layer of electrons. It takes several voltage pulses to turn on the MIEB101W1200EH, which is why it is often used for fast switching speeds. Once turned on, current can then flow through the IGBT to the Collector. The MIEB101W1200EH is also temperature-compensated, providing consistent operating performance at higher temperatures.
Limitations
While the MIEB101W1200EH IGBT is an excellent choice for high power applications, it is important to keep in mind that it is not able to handle extremely high temperatures and humidity conditions. The module must be operated within a temperature range of 0°C to 90°C and should not be exposed to direct sunlight or dust. Furthermore, the working environment must also maintain a relative humidity of 95% or less.
Conclusion
The MIEB101W1200EH IGBT is an ideal choice for a wide range of high power applications, from machine drives and UPS systems to industrial controls. The module utilizes a three-terminal configuration and is capable of fast switching speeds thanks to its temperature-compensated design. Furthermore, it is important for users to consider the environment in which the MIEB101W1200EH will operate, as it is not able to handle direct sunlight or excessive amounts of dust, and should be operated at temperatures of 0°C to 90°C and a relative humidity of 95% or less.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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MIEB101H1200EH | IXYS | 72.67 $ | 1000 | IGBT MODULE 1200V 183A QU... |
MIEB101W1200EH | IXYS | 95.75 $ | 1000 | IGBT MODULE 1200V 183A HE... |
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