Allicdata Part #: | MKI75-12E8-ND |
Manufacturer Part#: |
MKI75-12E8 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOD IGBT H-BRIDGE 1200V 130A E3 |
More Detail: | IGBT Module NPT Full Bridge Inverter 1200V 130A 50... |
DataSheet: | MKI75-12E8 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Obsolete |
IGBT Type: | NPT |
Configuration: | Full Bridge Inverter |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 130A |
Power - Max: | 500W |
Vce(on) (Max) @ Vge, Ic: | 2.5V @ 15V, 75A |
Current - Collector Cutoff (Max): | 1.1mA |
Input Capacitance (Cies) @ Vce: | 5.7nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 125°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | E3 |
Supplier Device Package: | E3 |
Base Part Number: | MKI |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The MKI75-12E8 is a type of insulated gate bipolar transistor (IGBT) module. It is a 4-pin, single-phase device designed for use in a variety of applications, including power supplies and motor control. IGBT modules provide a high power density and require less wiring than other similar components. The minimum order quantity for the MKI75-12E8 is 1000 pieces.
The MKI75-12E8 has a low conduction loss, a high input impedance, and is able to switch on/off in less than 1 microsecond. It is also capable of operating at temperatures up to 125°C and has a maximum surge current of 4500A. The module is constructed from an insulated gate bipolar transistor, a diode and a freewheeling diode mounted on an aluminum base plate and potted in thermally conductive epoxy.
The working principle behind the MKI75-12E8 is that of a three layer power semiconductor. It consists of an N-type channel between two P-type layers. When a small voltage is applied to the gate, the electrons in the N-type channel are attracted to the junction of the P-layers, creating a thin conductive P-N pathway. This current flows through the channel until the gate is switched off. The channel will then be shut off and the module will be in its off state.
The module is designed to be used in applications such as power converters, solar inverters, UPS systems, motor control, and other such applications. It can be used to create a bidirectional circuit, working as either an expansive or an expansive-reducing device depending on the current flow. It is well-suited for applications that require a high power density and low losses.
Due to its low losses, high surge current capabilities and good thermal conductivity the MKI75-12E8 can handle large currents for extended periods of time. This makes it ideal for applications such as motor control and power supplies. It is also highly reliable and is able to handle a wide range of temperatures and voltages.
In summary, the MKI75-12E8 is an insulated gate bipolar transistor module designed for use in a wide range of applications. It features a low conduction loss, high surge current capabilities and good thermal conductivity. It can be used to create a bidirectional circuit, working as either an expansive or an expansive-reducing device depending on the current flow. It is ideal for applications that require a high power density and low losses, such as motor control and power supplies.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
MKI75-06A7T | IXYS | 39.06 $ | 1000 | IGBT H-BRIDGE 600V E2PACK... |
MKI75-06A7 | IXYS | 37.71 $ | 1000 | MOD IGBT H-BRIDGE 600V 90... |
MKI75-12E8 | IXYS | 0.0 $ | 1000 | MOD IGBT H-BRIDGE 1200V 1... |
IGBT MODULE NPT FULL BRIDGE SP6IGBT Modu...
MOD IGBT SIXPACK RBSOA 1200V E1IGBT Modu...
IGBT MOD TRENCH PHASE LEG SP1IGBT Module...
POWER MODULE - IGBTIGBT Module Trench Fi...
PWR MODULEIGBT Module
POWER MOD IGBT 1200V A-IHM130-2IGBT Modu...