MKI80-06T6K Allicdata Electronics
Allicdata Part #:

MKI80-06T6K-ND

Manufacturer Part#:

MKI80-06T6K

Price: $ 33.93
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOD IGBT H-BRIDGE 600V 89A E1
More Detail: IGBT Module Trench Full Bridge Inverter 600V 89A 2...
DataSheet: MKI80-06T6K datasheetMKI80-06T6K Datasheet/PDF
Quantity: 1000
10 +: $ 30.84420
Stock 1000Can Ship Immediately
$ 33.93
Specifications
Series: --
Part Status: Active
IGBT Type: Trench
Configuration: Full Bridge Inverter
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 89A
Power - Max: 210W
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
Current - Collector Cutoff (Max): 500µA
Input Capacitance (Cies) @ Vce: 4.62nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: E1
Supplier Device Package: E1
Base Part Number: MKI
Description

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Transistors – IGBTs – Modules

An IGBT module is a type of transistor module that consists of integrated gate-bounded transistors known as IGBTs. These transistors are used in various applications including switching power supply topologies, motor control, and high-current circuit switching. The MKI80-06T6K IGBT module is a powerful and reliable module that is suitable for various applications. In this article, we will discuss the application field and working principle of the MKI80-06T6K IGBT module.

Application Field

The MKI80-06T6K IGBT module is a useful and reliable module for switching power supply, motor control, and high-current circuit switching applications. It is widely used in the automotive, industrial, renewable energy, and military industries. Additionally, this IGBT module is also suitable for applications where high voltage and current levels are present. It has a reverse voltage capability of up to 2,000 V and a peak current of 5,000 A.

Working Principle

The working principle of the MKI80-06T6K IGBT module is based on the principles of IGBTs. IGBTs are a type of transistor that combine the characteristics of MOSFETs and bipolar transistors. IGBTs consist of two main components: a gate-emitter transistor, and a collector-base transistor. When a bias voltage is applied to the gate-emitter transistor, it allows current to flow from the collector to the base. This in turn allows for current flow from the collector to the emitter. IGBTs are highly efficient, low power transistors which have low losses, high frequency operation, and high playing speed.

Features and Benefits

The MKI80-06T6K IGBT module offers many features and benefits, including fast switching speed, low on-resistance, low power losses, and high current capacity. The IGBTs in this module are highly reliable and can handle high voltage and current levels. Additionally, the module is compact and lightweight, making it easy to transport and install. It also features a low voltage drop and can withstand short circuit failures. These features make the MKI80-06T6K IGBT module an ideal choice for various applications.

Conclusion

In conclusion, the MKI80-06T6K IGBT module is a reliable, efficient, and powerful IGBT module that is suitable for a variety of applications. It offers many features and benefits, including fast switching speeds, low on-resistance, low power losses, and a high current capacity. The module is also highly reliable, and can withstand high voltage and current levels. With its various features, the MKI80-06T6K IGBT module is a cost-effective and efficient solution that is suitable for many applications.

The specific data is subject to PDF, and the above content is for reference

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