Allicdata Part #: | MM3Z10VT1OSCT-ND |
Manufacturer Part#: |
MM3Z10VT1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE ZENER 10V 200MW SOD323 |
More Detail: | Zener Diode 10V 200mW ±5% Surface Mount SOD-323 |
DataSheet: | MM3Z10VT1 Datasheet/PDF |
Quantity: | 1000 |
Specifications
Series: | -- |
Packaging: | Cut Tape (CT) |
Part Status: | Obsolete |
Voltage - Zener (Nom) (Vz): | 10V |
Tolerance: | ±5% |
Power - Max: | 200mW |
Impedance (Max) (Zzt): | 20 Ohms |
Current - Reverse Leakage @ Vr: | 100nA @ 8V |
Voltage - Forward (Vf) (Max) @ If: | 900mV @ 10mA |
Operating Temperature: | -65°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | SC-76, SOD-323 |
Supplier Device Package: | SOD-323 |
Base Part Number: | MM3Z10 |
Description
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The MM3Z10VT1 is classified as a single Zener diode and provides reliable voltage regulation and great power stability. The device is designed specifically for the application field of reverse energy protection. It has a wide operating temperature range and a wide range of power options, making it suitable for various applications. This article will discuss the application field and working principle of the MM3Z10VT1.The MM3Z10VT1 is most commonly used for reverse energy protection applications, such as voltage regulation and power supply circuits. The device is also suitable for use in voltage reference circuits, heat dissipation applications, automotive systems, and other general protection applications. The device can provide a reverse voltage protection level of 10V, with a high power rating of 500 mW.The device is constructed of a silicon epitaxial planar construction and is encased in a compact surface mount package. The package provides mechanical and environmental protection to the device and allows for the ease of use and handling.The working principle of the MM3Z10VT1 is based on the physical phenomenon of avalanche breakdown. This phenomenon is caused by a strong electric field which causes electrons to be rapidly accelerated in the material, leading to the formation of electron-hole pairs and current pulses. This current pulses generate a breakdown voltage which is then used to regulate the voltage of the device.The main feature of the MM3Z10VT1 is its stable voltage regulation. This is due to the high avalanche breakdown voltage of the device. The device has a low leakage current rating and therefore provides stabile, low-noise operation. In addition, the device has a low clamping voltage and therefore is capable of providing reliable protection, even in high temperature environments.In conclusion, the MM3Z10VT1 is a single Zener diode which is designed for the application field of reverse energy protection. The device has a wide operating temperature range and is therefore suitable for various applications. The device utilizes the physical phenomenon of avalanche breakdown to regulate the voltage and provides a reliable source of power stabilization.
The specific data is subject to PDF, and the above content is for reference
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