MM3Z51VT1G Allicdata Electronics
Allicdata Part #:

MM3Z51VT1G-ND

Manufacturer Part#:

MM3Z51VT1G

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: DIODE ZENER VREG 300MW SOD323
More Detail: Zener Diode 51V 300mW ±6% Surface Mount SOD-323
DataSheet: MM3Z51VT1G datasheetMM3Z51VT1G Datasheet/PDF
Quantity: 1000
1 +: $ 0.04000
10 +: $ 0.03880
100 +: $ 0.03800
1000 +: $ 0.03720
10000 +: $ 0.03600
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 51V
Tolerance: ±6%
Power - Max: 300mW
Impedance (Max) (Zzt): 180 Ohms
Current - Reverse Leakage @ Vr: 50nA @ 35.7V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Description

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The MM3Z51VT1G is a single Zener diode. It is predominantly used for output circuits and comprises a p-type base material construction. It can be used in many applications due to its low voltage and low dissipation power capabilities.

The diode\'s threshold voltage of 5.1V makes it well suited for use as a general-purpose Zener diode in circuits requiring an operating voltage below 5V. It can also be used as a low-power voltage reference source in circuits such as battery-powered devices. The diode has a maximum power dissipated of 500mW. Additionally, the diode is enclosed in a DO-35J miniature package, which provides a small footprint.

The MM3Z51VT1G diode\'s working principle is based on the physical phenomenon of Zener breakdown. This breakdown is caused by the presence of an electric field that overpowers the attractive force of the semiconductor’s atomic bonds. At heavy reverse bias, electrons tunnel through the junction, leading to a Zener breakdown allowing an increased reverse current to flow through the diode.

This diode\'s functionality is especially important when it is paired with a current limiting resistor that enables the diode to perform two duties. Firstly, the diode provides voltage regulation to the circuit by clamping the voltage to the Zener voltage. Secondly, the diode protects the circuit from damage due to overvoltage conditions by limiting the current that can flow through the circuit.

Furthermore, the Zener temperature coefficient is another parameter that should not be overlooked when using the MM3Z51VT1G diode. It affects the performance of the diode and the output voltage that can be expected over temperature. This is because the Zener voltage increases as the device temperature rises. Consequently, it is important to ensure that the device is designed to provide a stable voltage output in the operating temperature range of the application.

In conclusion, the MM3Z51VT1G is a single Zener diode that can be used in many applications due to its low voltage and low power dissipation capabilities. It is mainly used for output circuits and provides voltage regulation, as well as protects circuits from overvoltage damage by limiting the current. It is essential to consider the Zener temperature coefficient when designing a circuit to ensure it can deliver a stable voltage output over temperature.

The specific data is subject to PDF, and the above content is for reference

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