
MMBD101LT1G Discrete Semiconductor Products |
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Allicdata Part #: | MMBD101LT1GOSTR-ND |
Manufacturer Part#: |
MMBD101LT1G |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE SCHOTTKY 225MW 7V SOT23 |
More Detail: | RF Diode Schottky - Single 7V 225mW SOT-23-3 (TO-... |
DataSheet: | ![]() |
Quantity: | 18000 |
1 +: | $ 0.04000 |
10 +: | $ 0.03880 |
100 +: | $ 0.03800 |
1000 +: | $ 0.03720 |
10000 +: | $ 0.03600 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky - Single |
Voltage - Peak Reverse (Max): | 7V |
Capacitance @ Vr, F: | 1pF @ 0V, 1MHz |
Resistance @ If, F: | -- |
Power Dissipation (Max): | 225mW |
Operating Temperature: | 150°C (TJ) |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Base Part Number: | MMBD101 |
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The MMBD10-1LT1G is an NPN-type plastic surface-mount switching transistor that is much smaller than a normal transistor (SC-76 package). It is used in applications involving high-speed switching, such as in the power supplies and converters in phones, computers, and other electronic devices. It is also used in automotive, communication, and industrial applications. In terms of design, it is also often employed in TV converters and video signal converters.
Since this transistor is designed for a wide range of general-purpose applications, its functions vary according to particular needs. In EMC (electromagnetic compatibility) tests, the MMBD10-1LT1G can filter out interfering signals and suppress radio-frequency transmissions. In automotive, communication, and industrial applications, this transistor is often used in low-noise amplifiers, audio and radio frequency radio protection circuits, and various switching circuits. It can also be used in control circuits.
The MMBD10-1LT1G has a low threshold voltage and a high-frequency performance of up to 1GHz. Its high-frequency performance and low noise make it an ideal choice for a variety of applications. Its high gain-bandwidth ratio ensures reliable operation. The MMBD10-1LT1G is also optimized for low-noise switch applications that require low-threshold voltages, low saturation voltages, and low offset voltages. Its high-speed response also makes it an ideal choice for multiplexer and switch circuits.
The main working principle of the MMBD10-1LT1G is the formation of avalanche breakdown. Avalanche breakdown occurs when current passes through the small junction area of the transistor, and the energy levels become large enough to cause electrons to tunnel from the valence to the conduction band. This creates a large number of electron-hole pairs, which results in a high current flow. The voltage breakdown point is also lowered, which allows the transistor to switch from forward to reverse mode. This switching allows the transistor to be used in a wide range of applications.
In conclusion, the MMBD10-1LT1G is a versatile and reliable transistor for use in a variety of general-purpose applications. Its wide range of functions, high-frequency performance, and low-noise operation make it ideal for automotive, communication, and industrial applications. The MMBD10-1LT1G is also optimized for low-threshold voltages, low saturation voltages, and low offset voltages, making it suitable for multiplexer and switching circuits. Finally, the working principle of the MMBD10-1LT1G is based on the avalanche breakdown, which provides low-noise switching and a low-cost solution to many applications.
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