
Allicdata Part #: | MMBD2835LT1OSCT-ND |
Manufacturer Part#: |
MMBD2835LT1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE ARRAY GP 35V 100MA SOT23-3 |
More Detail: | Diode Array 1 Pair Common Anode Standard 35V 100mA... |
DataSheet: | ![]() |
Quantity: | 1000 |
Specifications
Series: | -- |
Packaging: | Cut Tape (CT) |
Part Status: | Obsolete |
Diode Configuration: | 1 Pair Common Anode |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 35V |
Current - Average Rectified (Io) (per Diode): | 100mA (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 100mA |
Speed: | Small Signal = |
Reverse Recovery Time (trr): | 4ns |
Current - Reverse Leakage @ Vr: | 100nA @ 30V |
Operating Temperature - Junction: | -55°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Base Part Number: | MMBD2835 |
Description
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MMBD2835LT1 application field and working principle
The MMBD2835LT1 is a dual-channel T-shaped diode array with a low forward voltage drop, a low capacitance, and a low carrying current. It is applicable for various loads including motor drives and telecom applications due to its low forward voltage drop. This product can be used to protect circuits from overvoltage caused by ESD and lightning, and it can also be used in AC-DC and DC-DC converters. In this article, we will discuss the application field and working principle of the MMBD2835LT1.The MMBD2835LT1 has a low forward voltage drop of 0.45V, a low capacitance of 0.60pF, and a low carrying current of 10V/mA. It is primarily used for power supply applications where a low forward voltage drop is required. It is suitable for motor drives and telecom applications due to its low forward voltage drop. The MMBD2835LT1 is also suitable for protection from overvoltage caused by ESD and lightning. It can also be used in AC-DC and DC-DC converters.The MMBD2835LT1 is built with a T-shaped configuration and has two isolated channels. Each of the MMBD2835LT1’s channels is equipped with an anode and a cathode. This makes it possible to use the MMBD2835LT1 as a dual rectifier with separate anode and cathode connections.The working principle of the MMBD2835LT1 is based on the conduction of electrical current through semiconductor material when a bias voltage is applied to it. The electrical current conduction is made possible by the presence of a potential barrier, which serves to restrict the flow of electrons. The potential barrier is created by placing a layer of semiconductor material between two layers of metal. When a positive voltage is applied to the anode terminal, electrons from the anode are attracted to the anode side of the barrier and are then repelled from the cathode side of the barrier. This phenomenon is called the PN junction effect, and it is used to control the flow of electrical current. The MMBD2835LT1’s low forward voltage drop, low capacitance, and low carrying current make it ideal for various applications including motor drives and telecom applications. Its T-shaped configuration and dual rectification channels also make it suitable for protection from overvoltage caused by ESD and lightning, as well as for use in AC-DC and DC-DC converters.In conclusion, the MMBD2835LT1 is a dual-channel T-shaped diode array that is suitable for various loads including motor drives and telecom applications due to its low forward voltage drop, low capacitance, and low carrying current. It can also be used to protect circuits from overvoltage caused by ESD and lightning, and in AC-DC and DC-DC converters.
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