MMBD4448HTW-TP

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The MMBD4448HTW-TP is a silicon Small Signal Shottky Diode Array that is designed to provide a range of features including low leakage and high blocking voltage. This device is suitably designed for high speed switching applications, particularly in telecom and datacom systems. The MMBD4448HTW-TP device is an array consisting of four high-speed switching diodes packed in a single surface-mount package. Furthermore, the device is designed to meet the automotive-grade requirements specified in the Automotive Electronics Council (AEC) Q101 standard.

The MMBD4448HTW-TP device is grouped under the Diodes - Rectifiers - Arrays category and is widely used in many applications including AC/DC high frequency rectification, overvoltage protection circuits and moderate-speed switching applications. The device is also useful for high current, high-switching speed circuits that require low switching losses. This device is ideal for high frequency automotive applications, such as ABS and airbag systems, as well as other DC to DC converter and AC/DC power supply systems.

The working principle of the MMBD4448HTW-TP device is based on its reverse blocking capability. The device has four integrated channels that provide a low on-state resistance (RDS(on)) while also delivering high blocking voltage. The low RDS(on) allows the device to be suitable for high frequency switching applications, while the high blocking voltage ensures adequate protection against electrostatic discharge (ESD) and overvoltage. The MMBD4448HTW-TP is designed with a patented Schottky barrier technology, thereby eliminating the need for external boosting components to minimize power loss.

The MMBD4448HTW-TP has a wide operating temperature range from -55°C to 150°C and a maximum peak current of 800mA. Furthermore, the device is highly reliable when it comes to maintaining its electrical ratings, and can handle a pulse voltage with peak-to-peak value of up to 40V. The device also features low leakage current of less than 5nA at any temperature and provides 7000V breakdown voltage.

In addition, the MMBD4448HTW-TP device is designed to integrate with different types of circuit configurations, including multi-chip integration and architectures with multiple power rails. It is also suitable for Telecordia GR-468-CORE and IEC61800-5-1 based designs. The device’s low standby power consumption makes it ideal for use in a variety of energy efficient equipment.

The MMBD4448HTW-TP device benefits from high speed and reliability, as well as a low power consumption. It is suitable for a range of different applications and circuit architectures, and is designed to meet the specifications of the AEC Q101 standard. This device should be considered as an ideal choice for use in a variety of high speed switching applications.

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