MMBD4448V-TP Allicdata Electronics
Allicdata Part #:

MMBD4448VTPMSTR-ND

Manufacturer Part#:

MMBD4448V-TP

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: Micro Commercial Co
Short Description: DIODE ARRAY GP 80V 250MA SOT563
More Detail: Diode Array 2 Independent Standard 80V 250mA Surfa...
DataSheet: MMBD4448V-TP datasheetMMBD4448V-TP Datasheet/PDF
Quantity: 1000
3000 +: $ 0.02282
Stock 1000Can Ship Immediately
$ 0.03
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Configuration: 2 Independent
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io) (per Diode): 250mA
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 100nA @ 70V
Operating Temperature - Junction: 150°C (Max)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563
Base Part Number: MMBD4448V
Description

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MMBD4448V-TP Application Field and Working Principle

MMBD4448V-TP is a type of diode array which is classified under the category of diodes, rectifiers, and arrays. This series of diodes utilizes a low profile SMT (Surface Mount Technology) Chip SOT-23 package that provides enhanced performance, small size, and improved electrical characteristics. This makes the MMBD4448V-TP a suitable choice for applications where small size or surface mount technology is required.

The main functions of the MMBD4448V-TP are to protect circuits from reverse current, provide high-current surge protection, or to perform voltage regulation tasks. The MMBD4448V-TP is made up of two bilateral independent diodes, a dual integrated circuit, and an N-type MOSFET. This diode array comes in several versions, with each having different functions.

The standard version of the MMBD4448V-TP allows current to flow in either direction while blocking voltages above a certain threshold level. This current is then released when the voltage drops below the threshold level. This type of configuration is ideal for providing high-current surge protection and power regulation.

The high-speed dual configuration of the MMBD4448V-TP provides voltage regulation by having two independent diode paths that can be used to control voltage levels. It is best used in applications where fast switching is required. The N-type MOSFET in this version can provide up to 80mA of current, which is ideal for powering sensitive electronic components.

Another version of the MMBD4448V-TP is its high-voltage bypass configuration, which is designed for applications that require high voltage protection. This version is composed of two independent diode paths, with one designed to allow current to pass through and the other designed to provide protection against high voltages. This type of diode array is often used to protect against high voltage transients and surges.

The MMBD4448V-TP is a highly versatile diode array that is suitable for a wide range of applications. Its wide range of features and configurations makes it a suitable choice for all kinds of rectification, power regulation, protection, and switching tasks.

When using the MMBD4448V-TP, it is important to follow the manufacturer’s instructions and guidelines to ensure optimal performance and protect the device from damage. Additionally, care should be taken while handling the device to ensure that it is not damaged and in order to maintain its working condition.

The specific data is subject to PDF, and the above content is for reference

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