MP5KE8.0A Allicdata Electronics
Allicdata Part #:

1086-6986-ND

Manufacturer Part#:

MP5KE8.0A

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 8V 13.6V DO204AL
More Detail: N/A
DataSheet: MP5KE8.0A datasheetMP5KE8.0A Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Voltage - Clamping (Max) @ Ipp: 13.6V
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 500W
Current - Peak Pulse (10/1000µs): 36.7A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 8.89V
Voltage - Reverse Standoff (Typ): 8V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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TVS - Diodes are transients, voltage suppression (TVS) diodes which are used to protect vulnerable electronic circuits and components from damage or destruction due to electro-static discharge (ESD) or electrical over-stress (EOS). The MP5KE8.0A is one such TVS diode and this article will explore its application field and working principle.

In terms of its application field, the MP5KE8.0A is a low dissipation surface mount diode which is robust and offers fast response times. It is broadly applicable for Automotive, Avionics and Industrial applications as well as in the Telecommunications industry. It is particularly useful in protecting electrical components from electrical over-stress conditions such as ESD, electrical transients and voltage surges.

The MP5KE8.0A also boasts a very low clamping voltage at 5.3V which makes it an excellent choice for providing protection from ESD and surges. Its fast response times and low leakage currents also make it a great choice for applications which require high switching speeds.

The working principle of the MP5KE8.0A is based on the Avalanche Breakdown Effect. This occurs when a high electric field is applied to a silicon diode which in turn induces a junction voltage that is much higher than its nominal applied voltage. The MP5KE8.0A uses this effect to achieve its low clamping voltage.

In order to further understand the working principle of the MP5KE8.0A, it is important to understand that it uses a specific structure known as the Breakdown Junction. This is a junction which is formed by two thin layers of silicon, with each layer connected to opposite sides of the diode. When an electric field is applied to this junction, an Avalanche Breakdown occurs where a current spike is generated. This current spike is able to overcome the device\'s normal operation and this allows the MP5KE8.0A to clamp the voltage.

The MP5KE8.0A also utilizes a metal-oxide varistor (MOV) to protect itself from high power transients. This MOV conducts excess current away from the TVS diode, thus preventing any permanent damage to the device.

The MP5KE8.0A is a robust and reliable TVS diode that is suitable for protecting electrical components from ESD, electrical transients and other over-stress conditions. It achieves its low clamping voltage due to the Avalanche Breakdown effect and is ideal for applications which require high switching speeds. Its utilization of the Breakdown Junction and a MOV also ensures that the diode is not subject to any permanent damage.

The specific data is subject to PDF, and the above content is for reference

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