MPA201 Allicdata Electronics
Allicdata Part #:

MPA201-ND

Manufacturer Part#:

MPA201

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS RF BIPO 6W 300MA 55AU2
More Detail: RF Transistor NPN 22V 300mA 2GHz 6W Chassis Mount ...
DataSheet: MPA201 datasheetMPA201 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 22V
Frequency - Transition: 2GHz
Noise Figure (dB Typ @ f): --
Gain: 13dB
Power - Max: 6W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
Current - Collector (Ic) (Max): 300mA
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55AU
Supplier Device Package: 55AU
Description

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The MPA201 transistors are a family of bipolar junction transistors (BJTs) with RF applications. They are used in many different types of applications, from low-power radio transmitters to high-power amplifiers. This article will discuss the applications in which the MPA201 transistors can be used, as well as the working principles that govern their operation.

Applications of the MPA201 Transistor

The MPA201 transistor is a versatile device that can be used in many different RF applications. It is commonly used in low-power radio transmitters, such as those found in wireless headsets, as well as in high-power amplifiers where it can be used as an output device. The device is also widely used in radio communication systems and is typically used as the final stage of power amplification.

The MPA201 transistor is also used in microwave applications, such as radar and satellite communication. In these applications, the transistor can be used to convert high-frequency signals into electrical signals that can be processed by other components. Additionally, the device can be used in RF sensing applications, where it can be used to measure the intensity of an electromagnetic field.

Working Principles of the MPA201 Transistor

The MPA201 transistors are junction field-effect transistors, or JFETs, which operate on the principle of a voltage-controlled bias between the two terminals. The two main terminals of the device are known as the collector and the emitter. The collector and the emitter are connected through a third terminal, known as the gate. The gate is used to control the voltage bias between the collector and the emitter.

When a positive voltage is applied to the gate, it results in an increase in the conductivity between the collector and the emitter. This increase in conductivity allows more current to flow between the collector and the emitter and allows power to flow in the direction of the emitter. Conversely, when the gate is supplied with a negative voltage, the conductivity between the collector and the emitter decreases, reducing the amount of current passing between them, thus reducing the flow of power.

Conclusion

The MPA201 transistor is a versatile device with a wide variety of applications in RF and microwave systems. It is commonly used as a low-power radio transmitter, as an amplifier output device, as a mixer in radio communication systems, and as a RF sensing device. The device operates on the principle of a voltage-controlled bias between two terminals and can be used to amplify signals or sense electromagnetic fields.

The specific data is subject to PDF, and the above content is for reference

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