MPLAD18KP11CAE3 Allicdata Electronics
Allicdata Part #:

MPLAD18KP11CAE3-ND

Manufacturer Part#:

MPLAD18KP11CAE3

Price: $ 25.38
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 11V 18.2V PLAD
More Detail: N/A
DataSheet: MPLAD18KP11CAE3 datasheetMPLAD18KP11CAE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
100 +: $ 23.06980
Stock 1000Can Ship Immediately
$ 25.38
Specifications
Voltage - Clamping (Max) @ Ipp: 18.2V
Supplier Device Package: PLAD
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 18000W (18kW)
Current - Peak Pulse (10/1000µs): 989A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 12.2V
Voltage - Reverse Standoff (Typ): 11V
Bidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

MPLAD18KP11CAE3 is part of TVS – Diodes family, which provides high current capability and very low reverse leakage current. This product is designed for protection against power surges and electrical transients in automotive and industrial circuit, among other industrial applications. It also serves as the overvoltage protection for consumer device and instrumentation.

MPLAD18KP11CAE3 has a unidirectional and ESD protection type, which is suitable for the protection of I/O lines in automotive and industrial applications. It features an integrated protection system for clamping and limiting overvoltage transients, with a low trigger current of 18 volts, a breakdown voltage of 12 volts, and a reverse leakage current of 5 μA at 25°C. Additionally, the device is capable of handling up to 3A of power. The temperature range is between -55°C and 125°C.

MPLAD18KP11CAE3’s working principle lies in a combination of an inherently low-capacitance MOS technology with an avalanche-rated diode technology. The MOS segment provides low capacitance and low resistance for low voltage signal applications. The avalanche diode in the circuit creates an ideal diode, which can be operated in both polarity. This diode-structured circuit protects the device from electrical transients such as ESD, overvoltage and reverse polarity, as well as other environmental conditions. When a transient current is above the clamping threshold, it triggers the avalanche diode and opens up the clamp diodes, allowing the current to pass through the protection circuit and dissipate the energy safely.

The low capacitance and reverse leakage current make MPLAD18KP11CAE3 an ideal choice for applications that require low-divergence in signal paths. Its ESD protection also makes it useful for applications that require protection from electrical transients. The small, surface mounted design allows it to be easily integrated into the existing system with minimal disruption. It also has superior EMI shielding capabilities that enable it to effectively reduce EMI radiations.

In conclusion, the MPLAD18KP11CAE3 is a versatile TVS – Diode product designed for power surge and electrical transient protection device. It has low capacitance and reverse leakage current that make it suitable for applications that require low-divergence in signal paths. Its highly integrated protection system and ESD protection function also make it suitable to protect against various environmental conditions, such as electrical transients and EMI radiations.

The specific data is subject to PDF, and the above content is for reference

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