MPLAD36KP45A Allicdata Electronics

MPLAD36KP45A Circuit Protection

Allicdata Part #:

MPLAD36KP45A-ND

Manufacturer Part#:

MPLAD36KP45A

Price: $ 24.31
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 45V 72.7V PLAD
More Detail: N/A
DataSheet: MPLAD36KP45A datasheetMPLAD36KP45A Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
100 +: $ 22.09750
Stock 1000Can Ship Immediately
$ 24.31
Specifications
Voltage - Clamping (Max) @ Ipp: 72.7V
Supplier Device Package: PLAD
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 36000W (36kW)
Current - Peak Pulse (10/1000µs): 496A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 50V
Voltage - Reverse Standoff (Typ): 45V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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Transient Voltage Suppressors (TVS) are widely used in electronics due to their high level of protection against overvoltage spikes. The SiC MOSFET, SPI MOSFET and Si Schottky diode are commonly used as active components in TVS-based circuits. Among these components, MPLAD36KP45A is a well-known SiC MOSFET that provides excellent protection against transient voltage surges. It is widely used in consumer electronics, automotive, industrial and aerospace applications.

MPLAD36KP45A is a N-channel MOSFET with a maximum drain-source voltage of 30 volts (VDS). It features an on-resistance of 0.13 ohms and a maximum current rating of 14.8 amperes (A). The device also has a drain current gate-source voltage threshold voltage of 1.5 volts (VGS(th)), making it suitable for use in low voltage applications. Additionally, the device comes with a recovery time (tRECO) of 160 nanoseconds (ns) and a maximum drain-gate-source capacitance of 398 pF, allowing it to handle voltage surges quickly and effectively.

MPLAD36KP45A is most commonly used in applications where a controlled turn-on voltage is required. This includes computer and telecommunications circuits, automotive computers, cell phone and smartcard circuits, and security systems. The device can also be used in power supply systems, where its ability to control voltage is invaluable. Moreover, the device’s low-dynamic on-resistance and fast turn-on time make it suitable for high-frequency switching applications.

The working principle of MPLAD36KP45A is relatively simple. The drain and the source are connected to a voltage source, and the gate is connected to a control voltage. When the control voltage is greater than the threshold voltage, the drain-source resistance drops, allowing current to flow from the drain to the source. The amount of current that can flow through the device is determined by the drain-source voltage, the gate-source voltage, and the on-resistance of the device. The device can also be used in reverse polarity, where the drain and source are reversed, which results in a blocking effect, preventing current flow.

In conclusion, MPLAD36KP45A is a widely used SiC MOSFET with a low on-resistance, fast turn-on time, and low gate-source threshold voltage. Its ability to control voltage allows it to be used in a variety of applications, including computer and telecommunications, automotive, power supplies, and high-frequency switching. Its working principle is relatively simple and follows the fundamentals of basic MOSFET physics.

The specific data is subject to PDF, and the above content is for reference

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