MPLAD6.5KP100AE3 Allicdata Electronics
Allicdata Part #:

MPLAD6.5KP100AE3-ND

Manufacturer Part#:

MPLAD6.5KP100AE3

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 100V 162V PLAD
More Detail: N/A
DataSheet: MPLAD6.5KP100AE3 datasheetMPLAD6.5KP100AE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Voltage - Clamping (Max) @ Ipp: 162V
Supplier Device Package: PLAD
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 6500W (6.5kW)
Current - Peak Pulse (10/1000µs): 40.1A
Series: --
Voltage - Breakdown (Min): 111V
Voltage - Reverse Standoff (Typ): 100V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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TVS - Diodes are an important and ubiquitous component in circuit designs. The MPLAD6.5KP100AE3 is an example of a TVS diode, and has an assortment of applications in different fields. This diode offers special protection features that prevents voltage and current damage, as explained in this article.

The MPLAD6.5KP100AE3 is a unidirectional diode with a sharp reverse breakdown voltage of 6.5KV. This diode\'s main purpose is lightning immunity protection and ESD protection in a variety of electronic circuits and components. Its protection capabilities can be used in industrial, automotive, medical, communications, or consumer applications. The diode can also be used to protect power circuits, RS-485 circuits,CAN circuits. It is ideal for protecting devices from electrical spikes or transients.

The working principle behind the MPLAD6.5KP100AE3 diode is based on avalanche breakdown. Avalanche breakdown occurs when a high voltage is applied across a diode, causing a large electric current to flow through it. This current produces a large electric field, which in turn causes electrons to accelerate and collide with the atoms in the diode material. This collision produces more electrons and further accelerates the current, creating an avalanche effect. The avalanche breakdown, then, is a phenomenon that occurs in a diode when a voltage threshold level is exceeded.

This diode is designed so that the avalanche breakdown voltage is equal to the nominal reverse breakdown voltage. This means that the protection voltage is always available, no matter how much current flows through it. Its special construction prevents breakdown in even the most extreme situations. In this way, it can protect sensitive circuits from damage from surges, spikes, and other transient disturbances.

The MPLAD6.5KP100AE3 diode also has the unique benefit of being Bidirectional. This means that it can protect circuits from both positive and negative voltage spikes. This increase the protection range of the device, and makes it suitable for a wider range of circuit designs.

The MPLAD6.5KP100AE3 diode is an example of the robust protection ability of TVS - Diodes. Its sharp reverse breakdown voltage, bidirectional protection, and strong avalanche breakdown protection make it an ideal choice for protecting a variety of circuits. Its ability to protect against overvoltage and overcurrent make it a vital component of circuit designs for all sorts of applications.

The specific data is subject to PDF, and the above content is for reference

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