MR0DL08BMA45 Allicdata Electronics
Allicdata Part #:

819-1060-ND

Manufacturer Part#:

MR0DL08BMA45

Price: $ 6.41
Product Category:

Integrated Circuits (ICs)

Manufacturer: Everspin Technologies Inc.
Short Description: IC RAM 1M PARALLEL 48FBGA
More Detail: MRAM (Magnetoresistive RAM) Memory IC 1Mb (128K x ...
DataSheet: MR0DL08BMA45 datasheetMR0DL08BMA45 Datasheet/PDF
Quantity: 1000
698 +: $ 5.82593
Stock 1000Can Ship Immediately
$ 6.41
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: RAM
Technology: MRAM (Magnetoresistive RAM)
Memory Size: 1Mb (128K x 8)
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-LFBGA
Supplier Device Package: 48-FBGA (8x8)
Description

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The MR0DL08BMA45 is a double data rate (DDR) memory module developed by Mitsubishi, the Japanese electronics and information technology company. It is typically used in industrial and automotive applications.

The module is based on DRAM technology, and is equipped with single-ended register-style data-out and address-in (RD. and A.) inputs which allow for efficient processing of multi-channel DDR data. The MR0DL08BMA45 is designed to meet the needs of high-frame-rate and real-time applications, such as automotive cockpit displays and digital signage.

MR0DL08BMA45 modules feature a high-performance memory controller and buffer, allowing for improved bandwidth and data processing speeds. The module has a high-performance write and read operations, providing improved data accuracy and reliability. In addition, the module has an integrated thermal management system, which allows it to operate at higher temperatures with lower power consumption.

The MR0DL08BMA45 has a number of safety and security features, including error correction and parity checking, redundant data storage, and a power failure recovery system. The module also has a secure erase feature, which prevents unauthorized access to sensitive data.

The MR0DL08BMA45 employs a single-bit architecture, which allows for higher memory densities and read/writes speeds than conventional two or four bit memories. The DRAM cell technology allows for higher endurance and temperatures, as well as improved data retention. The module also has a programmable burst-mode capability, which allows for efficient media transfer.

The MR0DL08BMA45 supports a wide range of communications protocols, including JEDEC DDR3, LPDDR3, and a variety of legacy buses. It also supports multiple channels and data widths, including four-bit-wide, eight-bit-wide, and sixteen-bit-wide data transfers.

The working principle of the MR0DL08BMA45 is relatively straightforward; when an address is input, the module accesses the contents of the addressed memory cell. The data can then be read or written to the cell by an appropriate command. The data is then sent back to the user via an output port. In the case of a write operation, the data is stored in the addressed cell.

The MR0DL08BMA45 is suitable for a wide range of applications, including industrial systems, automotive displays, digital signage, and consumer electronics. Its high-performance features make it particularly well-suited for use in high-frame-rate, real-time applications. It is also highly reliable, secure, and energy efficient.

The specific data is subject to PDF, and the above content is for reference

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