MR45V064BMAZAATL Integrated Circuits (ICs)

MR45V064BMAZAATL is a type of memory product. It is a kind of Flash memory device specially designed for NAND Flash memory based storage applications. It is a 64M bit (8M byte) part, organized as 8,192 blocks of 16K bytes, totalling 128 Megabits (16 Megabytes).MR45V064BMAZAATL is applicable to serial peripheral interface (SPI) Flash memory, which transfers data in a serial fashion. It is compatible with Serial Peripheral Interface (SPI) modes 0 and 3, and backward compatible with SPI modes 1 and 2. This is mainly due to its compatibility with the Serial Peripheral Interface principle, wherein only two wires—Serial Data In (SI) and Serial Data Out (SO)—are used for data transfers.MR45V064BMAZAATL also features Fast Read, Quad Output and Dual I/O that enabledfaster application execution and expanded memory density compared to standard SPI-types of Flash memories. The device’s Dual I/O feature allows two I/Os to sharpen shared memories in a single package, thereby improving its application compatibility and ultimately making it simpler for designers to create more comprehensive systems. In fact, MR45V064BMAZAATL can be used in a variety of storage applications such as automotive, Bluetooth, Wi-Fi, embedded systems, and consumers electronics applications. It is suitable for use in embedded systems, too. Moreover, MR45V064BMAZAATL operates in a temperature range from -40oC to +85oC, which makes it a perfect choice for industrial, automotive and networking applications. Furthermore, MR45V064BMAZAATL also employs advanced memory technology for Data retention as well as Erase/Write endurance that allows for greater protection against data corruptions due to random cell disturbances such as alpha particle strikes.The working principle of MR45V064BMAZAATL is based on the concept of static electricity, in which electric charge is transferred or stored in an object without the flow of any current. The device’s structure comprises a number of Flash cells that are composed of two main layers, the gate and source layer. During the programming cycle, a positive voltage (called VPP) is applied to the gate while the source layer is connected to a voltage source such as a ground terminal. The current will flow through the gate layer and is blocked due to the threshold voltage of the gate layer. Each of the cells holds one bit of data, with programmed cells indicating a low voltage and erased cells indicating a high voltage. Meanwhile, the state of the cells can be determined by reading the intermediate voltage level.In addition, the device is provided with a number of commands which enable it to perform read, erase, and write operations. The read command is also called the outputOperation, which serves to read out data stored in the Flash cells. The erase Command is used to erase all the cells in the device, and the write commands are used to write data bit by bit to the Flash memory.Overall, MR45V064BMAZAATL is a reliable memory device and its advanced technology and features make it an ideal choice for a wide range of industrial, consumer and embedded storage applications. Thanks to its compatibility with different kinds of SPI modes, it is an excellent choice for applications that require maximum data integrity and greater storage density.

A16N-MR45	Omron Automa...	0.0 $	1000	SWITCH PLATE E-STOP STOP
MR45V032AMAZBATL	ROHM Semicon...	0.0 $	1000	IC FRAM 32K SPI 15MHZ 8SO...
MR45V064BMAZAATL	ROHM Semicon...	1.05 $	1000	FERAM / 64KBIT (8KB X 8) ...
MR45V100AMAZAATL	ROHM Semicon...	2.11 $	1000	FERAM / 1MBIT (128KB X 8)...
MR45V256AMAZAAT-L	ROHM Semicon...	2.8 $	2500	IC FRAM 256K SPI 15MHZ 8S...
A22N-MR45	Omron Automa...	5.64 $	1000	STOP