MR4A16BCYS35 Allicdata Electronics
Allicdata Part #:

819-1017-ND

Manufacturer Part#:

MR4A16BCYS35

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Everspin Technologies Inc.
Short Description: IC RAM 16M PARALLEL 54TSOP2
More Detail: MRAM (Magnetoresistive RAM) Memory IC 16Mb (1M x 1...
DataSheet: MR4A16BCYS35 datasheetMR4A16BCYS35 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: RAM
Technology: MRAM (Magnetoresistive RAM)
Memory Size: 16Mb (1M x 16)
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP2
Description

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Memory is an essential component of computing. The MR4A16BCYS35 is a type of memory unit that has gained the attention of computer hardware enthusiasts due to its powerful performance and reliability. This article will discuss the fields of application of the MR4A16BCYS35, and its underlying working principle.

Application Field of the MR4A16BCYS35
The MR4A16BCYS35 is a type of dynamic RAM (DRAM) specifically designed for use in high-performance computing environments. It is optimized for applications that require high data access speeds, such as in gaming computers, or servers. In addition, the MR4A16BCYS35 can also be used in industrial and scientific computing, as it provides a high level of performance and reliability. The memory\'s low power consumption and cooling requirements also make it suitable for embedded systems.

Working Principle of the MR4A16BCYS35
The MR4A16BCYS35 utilizes a system of multiplexers and transistors that are used to store digital information in an easily accessible format. Each memory cell consists of tiny transistors, capacitors, and resistors that allow the data to be stored and retrieved. When a signal is sent to the memory, the transistors switch on, allowing charge to flow into the capacitors, which then stores the binary data. When the data needs to be retrieved, the memory controller sends a signal to the multiplexers, which then opens the transistor gates, allowing the capacitor to discharge the stored digital information.

The DRAM memory is also known as “cellular” memory, as its structure consists of memory cells that are arranged in an array. This array is used to store the data that is retrieved from the main memory. Due to its smaller size and faster access times, cellular memory is ideal for applications that require high data throughput, such as gaming or server applications. Furthermore, the memory cells of the MR4A16BCYS35 can be configured to either “read-only” or “write-only” memory, allowing the user to maximize the memory’s performance and enhance their computing experience.

The MR4A16BCYS35 is one of the most efficient and reliable types of memory available, and is often used in high-performance computers and embedded systems. Its reliable working principle also makes it a great choice for industrial and scientific computing requirements, as it provides a high level of performance and reliability. Although the DRAM seems to be a relatively complex piece of hardware, its structure is quite simple and is based on basic electrical principles.

The specific data is subject to PDF, and the above content is for reference

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