MS1076

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The MS1076 transistor is a medium power (100 watts), high frequency, high linearity bipolar NPN transistor with very high RF output power capabilities. It can be used in point to point communications, electronic warfare, and radar applications. The MS1076 is designed to be used in RF power amplifiers and low noise amplifiers.

The MS1076 is a high voltage, low noise, high linearity, high gain NPN transistor with superior performance and good stability. It has a maximum collector current of 35A and a maximum collector-emitter voltage of >12V. It is also designed to offer good thermal stability, which makes it well suited for use in applications where temperature stability is important. It is also able to deliver an output power of up to 100 watts.

The MS1076 features a built-in bias stabilizer circuit that provides very low distortion characteristics and excellent thermal stability. This stability makes the MS1076 well suited for use in a wide range of high-power RF applications. The bias stabilizer circuit ensures a stable bias state even when the device is used in high-power amplifier applications.

The MS1076 uses a low-noise silicon substrate that enables it to provide a low-noise gain of up to 32dB. This gain is particularly important in applications such as electronic warfare and radar systems, where a low-noise signal is critical to the accuracy of the system. It also features a high-voltage breakdown rating of 12V, which makes it suitable for use in high-power amplifier applications.

The MS1076 is designed to use its high gain and low-noise characteristics to provide reliable performance in high-power amplifier applications. It has good frequency response, low noise parameters, and excellent gain control. And due to its outstanding thermal stability and bias stabilizer circuit, the MS1076 has been designed to offer outstanding performance in challenging environments.

The MS1076 features a Thermal Impedance Displacement (TID) design, which allows the device to operate efficiently under high-temperature conditions. It also has a low VCE saturation voltage, which helps reduce intermodulation products in complex power amplifier applications. Furthermore, the MS1076 is designed to have excellent static and dynamic characteristics, which make it suitable for use in high-power amplifier applications.

Another key feature of the MS1076 is its excellent voltage upswing time and current handling capability. This ensures that the device is able to deliver fast switching speeds while reducing noise and distortion levels. The device also features excellent linearity, which helps to ensure that RF signals are accurately reproduced.

Overall, the MS1076 is an excellent NPN transistor designed to meet the needs of many high-power RF applications. It offers high gain, low noise, and excellent thermal and bias stability. The device also has excellent linearity, low VCE saturation voltage, and excellent voltage and current handling capabilities, making it well-suited for use in both point to point communications and electronic warfare applications.

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