Allicdata Part #: | MS1227-ND |
Manufacturer Part#: |
MS1227 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS RF BIPO 80W 4.5A M113 |
More Detail: | RF Transistor NPN 18V 4.5A 30MHz 80W Chassis Mount... |
DataSheet: | MS1227 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 18V |
Frequency - Transition: | 30MHz |
Noise Figure (dB Typ @ f): | -- |
Gain: | 15dB |
Power - Max: | 80W |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 1A, 5V |
Current - Collector (Ic) (Max): | 4.5A |
Operating Temperature: | 200°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | M113 |
Supplier Device Package: | M113 |
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MS1227 Application Field and Working Principle
The MS1227 is a transistor that falls under the group of transistors called bipolar junction transistors (BJT) and more specifically in the radio-frequency (RF) section. It is a device that is used in many applications such as amplifiers and switches. The \'MS\' in its name stands for its manufacturer – Motorola, and the \'1227\' refers to its type number.
Bipolar junction transistors are three Layer transistors, consisting of a collector (C), base (B) and emitter (E). The main difference between BJT and other transistors is the voltage drop across the base of the BJT which is relatively low, usually 0.7V or less. This allows them to operate at higher voltages (up to 700V) and higher currents (up to 50A) than other types of transistors.
A BJT works in two principle modes, namely the common-emitter mode and the common-collector mode. In the common-emitter mode when a positive voltage is applied to the base, the current flowing from the emitter to the collector increases which in turn creates a larger current through the collector to the emitter. In the common-collector mode, when a positive voltage is applied to the base, the current flowing from the emitter to the collector decreases which reduces the current flowing through the collector to the emitter.
The MS1227 is a high-impedance, low-bias BJT that is exceptionally well suited for radio-frequency and switching applications. It has excellent current gain (up to 400) and low noise. It is capable of operating at up to 750 mA and 400V. It is available in two package styles, TO-220 and TO-247, which use two and three leads, respectively.
The MS1227 is used in various applications, such as for low noise amplifiers (LNA) and power gain amplifiers (PGA) for RF applications. It is also used as a switching device in amplifiers and in some circuit designs. It is an ideal choice for those looking for a low-cost, low-power, high-current transistor.
In summary, the MS1227 is a high-impedance, low-bias, bipolar junction transistor (BJT) that belongs to the radio-frequency (RF) section. It is used for various applications such as amplifiers and switching. Its features include excellent current gain up to 400, low noise, high current and power ratings and low bias. It is available in two package styles, TO-220 and TO-247. It is an ideal choice for those looking for a low-cost, low-power, high-current transistor.
The specific data is subject to PDF, and the above content is for reference
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