MS1336 Allicdata Electronics
Allicdata Part #:

MS1336-ND

Manufacturer Part#:

MS1336

Price: $ 50.52
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS RF BIPO 70W 8A M135
More Detail: RF Transistor NPN 18V 8A 175MHz 70W Chassis, Stud ...
DataSheet: MS1336 datasheetMS1336 Datasheet/PDF
Quantity: 1000
75 +: $ 45.92750
Stock 1000Can Ship Immediately
$ 50.52
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 18V
Frequency - Transition: 175MHz
Noise Figure (dB Typ @ f): --
Gain: 10dB
Power - Max: 70W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 250mA, 5V
Current - Collector (Ic) (Max): 8A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis, Stud Mount
Package / Case: M135
Supplier Device Package: M135
Description

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The MS1336 application and its working principles are used to transfer signals between different pieces of equipment or communication systems, or it can also be used to support and control the transmission of electricity between systems. This component belongs to a Radio Frequency (RF) bipolar junction transistor (BJT) and is based on the NPN model. An NPN transistor is a three-terminal device primarily composed of two different semiconductor materials and two p-n junctions. Generally speaking, the base-emitter junction is responsible for the electronic flow, and the base-collector does the same.

Specifically, the MS1336 can be used for a variety of electronic purposes such as amplifying a signal, generating a high-frequency amplifier, and providing automatic gain control. It is also used in telecom applications designed to support at base-station level, such as base transceiver station & radio network controllers.

To understand the MS1336\'s working principles, it is important to consider the electrical properties of a BJT, which relies on a small current at the base of the transistor in order to control a larger current between the collector and emitter, also known as the on-off switch effect. When a small current is applied to the bases, electrons are generated, and the small current then activates an increased current through both the collector and emitter, allowing a low-power signal to control a much larger current.

Therefore, the MS1336 is designed to open and close its switch to allow current to pass through and cut off current when there is no input. Its features include a more robustness and better dissipating capabilities compared to other transistors, low noise and high switching capability for sensitive contracts, high gain with low losses and a maximum supply voltage of 10-32V.

The MS1336 can be used in wide variety of applications including RF amplifiers, RF oscillators, high-frequency amplifiers, sensor applications, voltage-controlled oscillators, small-signal amplifiers, power amplifiers, impedance matching circuits, and pulse-width modulation circuits.

The type of transistor enables a single device to be used in millions of different applications, due to its easy switching on/off feature and low power needs. As such, this tiny and yet ubiquitous component is used in a wide range of everyday items, ranging from smartphones and computers, to household appliances and automotive infotainment systems.

In conclusion, the MS1336 is a Radio Frequency (RF) bipolar junction transistor (BJT) that belongs to the NPN model. It is used in many different telecommunication and electronic applications, due to its robustness, gain, low noise, and power efficiency. It also has a wide range of application including amplifying signals, generating amplifiers, providing automated gain control, and other small-signal amplifiers.

The specific data is subject to PDF, and the above content is for reference

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