Allicdata Part #: | MS1649-ND |
Manufacturer Part#: |
MS1649 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS RF BIPO 7.8W 470MHZ TO39 |
More Detail: | RF Transistor NPN 16V 1A 470MHz 7.8W Through Hole ... |
DataSheet: | MS1649 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 16V |
Frequency - Transition: | 470MHz |
Noise Figure (dB Typ @ f): | -- |
Gain: | 9.5dB |
Power - Max: | 7.8W |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 100mA, 5V |
Current - Collector (Ic) (Max): | 1A |
Operating Temperature: | 200°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-205AD, TO-39-3 Metal Can |
Supplier Device Package: | TO-39 |
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,The purpose of this article is to provide a general overview of the MS1649 application field and working principle, and to categorize it under Transistors - Bipolar (BJT) - RF. This article will also explain some of the benefits and limitations associated with the MS1649.
The MS1649 is a derivative of the classic bipolar junction transistor (BJT) and is used in many radio frequency (RF) applications due to its high current gain. The BJT is a bipolar device, which means that two differently doped regions of the same semiconductor material are used to create a p-n junction. This p-n junction acts as a rectifier, allowing current to mostly flow in one direction. The BJT also acts as an amplifier by using the current flowing through the junction to control a larger flowing current.
The MS1649 is specifically designed for RF applications and has a wide range of benefits over other BJTs, such as a low noise figure, a low power consumption, and a wide dynamic range. These characteristics make the MS1649 ideal for RF amplifiers, oscillators, and other related circuitry. The MS1649 also has a low-temperature coefficient, meaning it is less likely to be affected by variations in the ambient temperature. This makes the MS1649 an ideal choice for high-precision applications.
However, the MS1649 also has some limitations. For instance, the BJT type amplifiers are not as efficient as some other types of amplifiers such as field-effect transistors (FETs) and junction FETs (JFETs). In addition, the gain of BJTs is largely determined by the environment they are in, so higher gains are only achievable if the environment is tailored to the BJT.
In conclusion, the MS1649 is a derivative of the classic bipolar junction transistor (BJT) and is an ideal device for RF applications due to its high current gain, low noise figure, low power consumption, wide dynamic range, and low-temperature coefficient. Although it does have some limitations, such as its relatively low efficiency compared to other types of amplifiers, these limitations can be mitigated with careful design. As such, the MS1649 is a solid choice for any RF application.
The specific data is subject to PDF, and the above content is for reference
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