MS2201 Allicdata Electronics
Allicdata Part #:

MS2201-ND

Manufacturer Part#:

MS2201

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS RF BIPO 10W 250MA M220
More Detail: RF Transistor NPN 45V 250mA 1.025GHz ~ 1.15GHz 10W...
DataSheet: MS2201 datasheetMS2201 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 45V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): --
Gain: 9dB
Power - Max: 10W
DC Current Gain (hFE) (Min) @ Ic, Vce: 0.95 @ 10mA, 5V
Current - Collector (Ic) (Max): 250mA
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M220
Supplier Device Package: M220
Description

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The MS2201 is a high-frequency bipolar transistor applicable in air-traffic control applications, such as radar and communication amplifiers. It is specifically designed for those applications in which ruggedness, low noise and long life are the key requirements. The MS2201 is designed to be used in Class C amplifiers, which are used for power amplification, but it is also used for envelope or pulse amplifiers. This is because of its low distortion and fast switching speed.

The MS2201 is a NPN transistor with a collector current of up to 5 A and a power dissipation rating at 25 ℃ of up to 5 W. It has a maximum junction temperature of 175 °C and a minimum storage temperature of -60 °C to +175 °C. The chip is housed in an SOT223 package which has a size of 5 x 5 mm and a height of 1.5 mm. This makes it a very small and highly efficient device.

The MS2201 is a high-frequency bipolar transistor with a wide band operation (0.1 – 20 GHz). It has an noise figure of 6 dB and an amplification factor of 25. It is capable of providing a current gain h fe of up to 60, with a maximum frequency of 20,000 MHz. The transistor is highly linear, providing superior performance in terms of accuracy and distortion levels.

The MS2201 works on the principle of current conduction. When a voltage is applied to the base, it causes a small current to flow from the emitter to the collector. This current is amplified by the transistor and is then leveraged to provide greater power for the application. The MS2201 also has an integrated protection diode, which helps to protect the circuit from short circuit and over voltage.

The MS2201 is primarily used in air-traffic control applications, such as radar and communication amplifiers. It is also used in other fields such as RF amplifiers, base station amplifiers, and broadband amplifiers. The MS2201 has a low noise figure and fast switching speed, which makes it ideal for those applications where high-quality audio signals are required. The low distortion and low EMI levels also make it suitable for precision applications.

The MS2201 is also ideal for power amplifiers as it is rated for up to 5A of collector current and 5W of dissipation power. It is also very rugged and has good heat stability thanks to its low power requirements and short circuit protection. The MS2201 has a wide operating temperature range and its small form factor makes it ideal for use in small designs.

The MS2201 is a high-performance bipolar transistor that is designed for use in air-traffic control applications. It is able to provide superior performance in terms of accuracy, distortion levels, and noise figure. Its low power requirements, low distortion, and high maximum frequency make it perfect for those applications that require reliable and high-performance operation. The integrated protection diode helps protect the circuit from shorts and over voltage and its small form factor makes it ideal for small designs. The MS2201 is a valuable addition to any application in which ruggedness, low noise and long life are the key requirements.

The specific data is subject to PDF, and the above content is for reference

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