MS2206A

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MS2206A is a high-power chip-scale RF transistor and is part of the Mismatch Technology family. The MS2206A features wideband and high-power amplifying capability, output power up to 3 dBm (power gain of 21 dBm), and on-chip Adaptive Input Impedance Matching (ALIM) technology, which allows the designer to achieve excellent matching across the entire input-impulse region of 1 to 100 MHz. As a result, the MS2206A is particularly well suited for wireless applications, especially those with fast throughput (such as mobile broadband devices and 4G/LTE mobile devices).

The MS2206A is a surface mountable, size-reduced monolithic device made of both silicon and high-power GaN materials. The power transistor offers the most advanced performance, power and thermal management capabilities for high-end RF applications. Its main characteristics include: thermal impedance of 0.25 to 0.30 K/W, output power of up to 3 dBm and on-chip Adaptive Input Impedance Matching (ALIM) technology.

The MS2206A\'s technology delivers a unique combination of high performance and power efficiency. The device includes a die power dissipation capability of up to 500 mW, a push-pull amplifier, two RF ports and two output ports. The transistor also offers on-chip adjustable power dissipation, so that the device’s performance can be tailored according to application demands.

The power transistor has two different working modes that can be used in different temperature ranges: pre-bias and operating state. In pre-bias mode, the device is operated in a low temperature environment and the supply voltage is slightly higher than the output voltage. The pre-biased transistor exhibits excellent thermal stability and power efficiency due to the increased supply voltage. The device is able to maintain bias points well within a given temperature range.

In operating state, the power transistor is operated in a higher temperature (ambient or stabilized) environment. This mode of operation yields significantly higher performance from the device due to the significantly larger supply voltage. In addition, the device exhibits excellent thermal stability and power efficiency due to the increased supply voltage.

The MS2206A is a high-power chip-scale RF transistor that features wideband and high-power amplifying capability, output power up to 3 dBm (power gain of 21 dBm), and on-chip Adaptive Input Impedance Matching (ALIM) technology, which allows the designer to achieve excellent matching across the entire input-impulse region of 1 to 100 MHz. It has a die power dissipation capability of up to 500 mW and two different working modes. The MS2206A has advantages over traditional power transistors due to its small size, improved output power, power efficiency and thermal stability.

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