MS2203 Allicdata Electronics
Allicdata Part #:

MS2203-ND

Manufacturer Part#:

MS2203

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS RF BIPO 5W 300MA M220
More Detail: RF Transistor NPN 20V 300mA 1.09GHz 5W Chassis Mou...
DataSheet: MS2203 datasheetMS2203 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 1.09GHz
Noise Figure (dB Typ @ f): --
Gain: 10.8dB ~ 12.3dB
Power - Max: 5W
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Current - Collector (Ic) (Max): 300mA
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M220
Supplier Device Package: M220
Description

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The MS2203 is a field-effect transistor (FET) that is used for radio frequency (RF) applications. The MS2203 can be classified as a bipolar junction transistor (BJT). It is an amplifier that takes in an input signal and amplifies it, providing a power gain of up to 10 dB. This is due to the fact that the MS2203 is able to operate with a high transconductance, which is the ratio of output current to input voltage.

The working principle behind the MS2203 is a bit complicated but can be simplified by looking at the basic operation. It is composed of two main components: the gate, and the emitter. The gate has a voltage applied through it and the emitter has current running through it. This creates a field effect, where a change in the applied voltage leads to a change in the current in the emitter. This can be used to produce an amplified signal.

The MS2203 has several benefits to offer in RF applications. It offers high power gain, which is important when amplifying small signals. It also has low distortion, which is necessary for accurate signal reproduction. Additionally, it is able to provide large amounts of gain while using low current and low power consumption. All of these features make the MS2203 an ideal choice for use in radios, amplifiers, and other RF applications.

The MS2203 is able to provide optimal performance in RF applications due to its high transconductance. This allows it to amplify a small signal to a substantially larger one, with minimal distortion. Furthermore, the transistor has a very low output impedance and does not require the use of a load resistor, making it a suitable choice for applications that require high power gain.

In summary, the MS2203 is a bipolar junction transistor (BJT) that is capable of providing high power gain and low distortion in radio frequency (RF) applications. It is able to achieve this due to its high transconductance, which provides a large amount of gain while using low current and low power consumption. The MS2203 is an ideal choice for use in radios, amplifiers, and other RF applications.

The specific data is subject to PDF, and the above content is for reference

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