Allicdata Part #: | MS2211-ND |
Manufacturer Part#: |
MS2211 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS RF BIPO 25W 900MA M222 |
More Detail: | RF Transistor NPN 48V 900mA 960MHz ~ 1.215GHz 25W ... |
DataSheet: | MS2211 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 48V |
Frequency - Transition: | 960MHz ~ 1.215GHz |
Noise Figure (dB Typ @ f): | -- |
Gain: | 9.3dB |
Power - Max: | 25W |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 250mA, 5V |
Current - Collector (Ic) (Max): | 900mA |
Operating Temperature: | 250°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | M222 |
Supplier Device Package: | M222 |
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MS2111 is a type of transistor commonly used in radio-frequency (RF) applications. It is a bipolar junction transistor (BJT), specifically designed for applications where high power and high frequency are needed. These transistors are used in a wide range of applications, ranging from low-power audio amplifiers and radio receivers to high-power switching applications.
The basic construction of a MS2111 transistor is a three terminal device. It consists of a base, collector and emitter. The physical construction of the transistor uses three semiconductor layers – one layer is composed of closely doped n-type material which forms the base region. The other two layers are composed of either p-type or n-type material (depending on the type of transistor) and form the collector and emitter region. The collector layer is typically larger in size than the emitter layer, so the terminals are labeled in order of the layer size – base, collector and emitter.
These transistors have some distinct characteristics which make them suitable for RF applications. They can typically handle large currents and high voltages than other types of transistors. They are also quite stable and can reproduce very high frequency signals at a wide range of frequencies. Additionally, they do not suffer from high capacitance or high noise levels, which can be a problem with other types of transistors.
The working principle of a MS2111 transistor is similar to other types of BJT transistors. When a voltage is applied to the base terminal, it causes a controlled amount of current to flow through the base-collector junction. This current, in turn, multiplies the input current by a certain amount, and produces an output current from the collector terminal which is larger than the input current. This is called amplification, and is the reason why transistors are so widely used in signal processing and audio applications.
Other important performance characteristics of MS2111 transistors include gain, stability and lifetime. These will depend on the specific device and its specific application, and should be taken into consideration when selecting the appropriate transistor for a particular application. For example, for RF applications, the stability and gain of a MS2111 transistor should be considered when selecting the best device for the application.
In summary, MS2111 is a type of BJT, specifically designed for RF applications. Its distinct characteristics make it well suited for this type of application, and its working principle is similar to other types of BJT transistors. It is important to understand the performance characteristics of a particular device when selecting the best transistor for a particular application. With the correct selection of transistors, MS2111 can be used to create efficient and reliable RF applications.
The specific data is subject to PDF, and the above content is for reference
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MS22T1-C22-4070-W-1-00 | Opulent Amer... | 33.21 $ | 24 | MOD BLOCK XHP50 4000K REC... |
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MS22T1-C22-4080-DWC-1-00 | Opulent Amer... | 31.21 $ | 1000 | MOD BLOCK XHP50 4000K SQU... |
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