MS2212

Series:	--
Packaging:	Bulk
Part Status:	Active
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	55V
Frequency - Transition:	960MHz ~ 1.215GHz
Noise Figure (dB Typ @ f):	--
Gain:	8.1dB ~ 8.9dB
Power - Max:	50W
DC Current Gain (hFE) (Min) @ Ic, Vce:	15 @ 500mA, 5V
Current - Collector (Ic) (Max):	1.8A
Operating Temperature:	250°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	M222
Supplier Device Package:	M222

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Introduction

MS2212 is a type of bipolar junction transistor (BJT) specifically designed for the radio frequency (RF) range. It offers high gain and high power output with excellent linearity, one of the most important parameters needed for radio frequency performance. It is widely used in mobile communication, Wi-Fi and Bluetooth equipment, and short-range telecommunication systems. This article will discuss the application field and working principle of the MS2212 transistor.

Application Field

The MS2212 is used in a variety of applications due to its high input power and excellent linearity. It is often used in mobile communication and Wi-Fi equipment, because it can handle high input power without generating large amounts of harmonic distortion. It is also used in Bluetooth equipment and short-range telecommunication systems, since it provides superior linearity when operating at radio frequencies. In addition, the MS2212 is used in amplifiers, receivers, and oscillators, because it is well-suited to handling frequency shift keying (FSK) and digital modulation schemes. The device can also be used in broadband spectrum analyzers because of its excellent linearity over a wide range of input power.

Working Principle

Bipolar transistors are known for their high gain and power output and the MS2212 is no exception. The device consists of two junctions, an emitter and a collector, between which is a base. When a small current is applied to the base, it draws electrons from the emitter. This current is amplified in the collector, which draws electrons from the base and sends them out to the load. The key strength of the MS2212 lies in its linearity, which means that the current passing through the device is proportional to the voltage applied. This means that the device can accurately transmit signals without introducing distortion, making it ideal for radio frequency applications. Another important feature of the MS2212 is its high input power capability. This allows it to operate with higher input power levels without causing excessive harmonic distortion and other unwanted noise. Finally, the MS2212 is also known for its robustness and reliability. It can handle high levels of temperature and vibration, making it suitable for a wide range of applications.

Conclusion

The MS2212 is a bipolar transistor designed for the radio frequency range. It offers high gain and power output with excellent linearity and can handle high input power levels. It is widely used in mobile communication, Wi-Fi, Bluetooth and short-range telecommunication systems, amplifiers, receivers and oscillators, and broadband spectrum analyzers. The device also offers excellent linearity over a wide range of input power, robustness and reliability.

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