MS2215

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	55V
Frequency - Transition:	960MHz ~ 1.215GHz
Noise Figure (dB Typ @ f):	--
Gain:	7.5dB
Power - Max:	300W
DC Current Gain (hFE) (Min) @ Ic, Vce:	20 @ 5A, 5V
Current - Collector (Ic) (Max):	16.5A
Operating Temperature:	250°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	M216
Supplier Device Package:	M216

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MS2215 is a high frequency bipolar junction transistor (BJT) which offers superior performance in both radio frequency (RF) and microwave applications. It is designed for very low noise and low harmonic distortion. It is designed for a wide bandwidth and extended frequency range, and is suitable for use in amplifier and oscillator circuits, as well as for active filters, mixers, and numerous other applications.

Features

The MS2215 offers a number of features that make it an excellent choice for many RF and microwave applications, including:

• Low noise performance
• Low harmonic distortion
• High input/output impedance
• Wide bandwidth
• High power gain
• Excellent thermal stability

Applications

The MS2215 is an ideal choice for use in a variety of RF and microwave applications, including:

• Amplifiers
• Oscillators
• Active filters
• Mixers
• Duplexers and diplexers
• Antennas
• Sensing elements
• Transceivers
• Power amplifiers

Working Principle

The MS2215 is a bipolar junction transistor (BJT) which relies on the manipulation of electron flow in order to amplify an electrical signal. It consists of three layers of semiconductor material, each layer operating as an individual diode. When a voltage is applied to the base-emitter junction, electrons in the base layer are attracted to the emitter layer. This causes a current to flow from the emitter to the base. The current is then amplified by the collector and output from the transistor as an amplified electrical signal.The MS2215 also utilizes a Darlington arrangement in which two BJTs are connected together in a cascaded configuration to create a single transistor with increased gain. The two transistors are connected in a "back-to-back" configuration, with one BJT acting as a gain stage for the other. This increases the gain and lowers the noise, allowing the MS2215 to deliver superior performance in RF and microwave applications.

Conclusion

The MS2215 is an ideal choice for RF and microwave applications due to its low noise performance, low harmonic distortion, and wide bandwidth. It is also highly stable and offers a high power gain, making it suitable for use in amplifiers, oscillators, and active filters. Its Darlington arrangement allows for improved gain and reduced noise, making it a viable solution for many RF and microwave applications.

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