MS2228

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	65V
Frequency - Transition:	1.03GHz ~ 1.09GHz
Noise Figure (dB Typ @ f):	--
Gain:	9dB
Power - Max:	175W
DC Current Gain (hFE) (Min) @ Ic, Vce:	10 @ 1A, 5V
Current - Collector (Ic) (Max):	5.4A
Operating Temperature:	200°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	M214
Supplier Device Package:	M214

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MS2228 Application Field and Working Principle

MS2228 is a type of RF Bipolar Junction Transistor (BJT) that is widely used for radio frequency (RF) applications. It is manufactured by a number of manufacturers, including Motorola, Philips, and STMicroelectronics. The MS2228 is a dual-contacted NPN device, which means it consists of two separate connections, the collector and the base. This type of transistor is often referred to as a “dual gate” or “dual gate-slide” transistor in order to enable accurately controlled operation on both sides.

Applications

MS2228 is widely used in various applications, ranging from low-power FM transmitters to high-power and broadband amplifiers. It is also used in HF communications, audio and microwave oscillators, low-noise amplifiers, and various other RF applications. The MS2228 has high gain and low noise, making it particularly well-suited for high-bandwidth, low-noise amplifiers. Additionally, its low current-noise characteristic makes it an ideal device for power management applications, such as switching power supplies and DC/DC converters.

Specifications

The MS2228 transistors are available in a range of packages, including TO-226G, TO-220G, and TO-18G. Each package contains two NPN transistors, and the transistor is specified at a junction temperature of 25 degrees Celsius. The maximum collector-emitter voltage is 30V, the maximum collector-base voltage is 30V, and the maximum emitter-base voltage is 6V. The maximum collector current is 1.5A, and the maximum power dissipation is 1.5W.

Working Principle

The basic working principle of the MS2228 is the same as any other bipolar junction transistor. It is based on the principle of negative feedback, where two terminals are used to control current flow from the collector to the emitter. When there is a small voltage applied to the base of the transistor, current flows from the collector to the emitter and is known as the “on” state. When the base voltage is increased, the current flow is stopped, which is known as the “off” state. The working of the MS2228 differs slightly from other types of transistors due to its dual-contacted design. The dual-contacted design of the MS2228 allows the current to be split into two parts, one part flowing through the collector and the other through the base. This enables the device to switch on and off quickly, which makes it ideal for high-frequency and high-power applications.

Conclusion

The MS2228 is a type of RF Bipolar Junction Transistor (BJT) that is widely used for radio frequency applications. It is extremely versatile, offering excellent low noise and high gain characteristics which make it suitable for a wide range of power management applications, such as switching power supplies and DC/DC converters. It is also well-suited for audio and microwave oscillators, HF communications, and low-noise amplifiers. The MS2228 is based on the principle of negative feedback and is capable of switching on and off quickly due to its dual-contacted design.

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