Allicdata Part #: | MS2267-ND |
Manufacturer Part#: |
MS2267 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS RF BIPO 575W 20A M214 |
More Detail: | RF Transistor NPN 60V 20A 960MHz ~ 1.215GHz 575W C... |
DataSheet: | MS2267 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Frequency - Transition: | 960MHz ~ 1.215GHz |
Noise Figure (dB Typ @ f): | -- |
Gain: | 8dB ~ 8.7dB |
Power - Max: | 575W |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 10 @ 1A, 5V |
Current - Collector (Ic) (Max): | 20A |
Operating Temperature: | 250°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | M214 |
Supplier Device Package: | M214 |
Description
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MS2267 Application Field and Working Principle
The MS2267 transistor is a N-Channel, depletion-mode, low frequency and wideband amplifier. It was developed by Cernstone, Inc. and is a particular member of the CERNSTONE family of integrated bipolar transistors for use in RF applications. The MS2267 was designed to provide high gain and bandwidth over a wide range of frequencies and to generate isolation levels that are essential for building reliable RF systems.The MS2267 is part of the CERNSTONE family of RF transistors, which are designed for use in RF applications such as low noise amplifiers and image rejection applications. The MS2267 has a low output conductance, low distortion, and good stability, making it ideal for a variety of applications in the RF and microwave industry.The MS2267 is a three-terminal device consisting of a transistor, a bias resistor, and an output transformer. The transistor consists of a base and an emitter that are easy to access and a controlled gate. It is powered by bias voltage through the bias resistor, generating an appropriate gate-to-emitter voltage to provide the required gain and bandwidth. The output transformer provides an isolated output to the load and is connected to the emitter terminal of the transistor.The MS2267 has an RF gain of at least 15 dB, with an operating frequency range of 500 MHz to 20 GHz. It can also operate at a power supply voltage of 3.3 V, making it suitable for use in many battery-powered applications. It also has a good gain flatness, with minimal amplitude distortion over its operating frequency range.The MS2267 is a low frequency and wideband amplifier, suitable for use in a variety of RF applications, including low noise amplifiers, image rejection applications, gain control, and automatic gain control (AGC) operation. It has been successfully used in a number of applications, such as land mobile radio, mobile radio, base transceiver station transceivers, repeaters, radar systems, and satellite communications systems.The MS2267 is a reliable and low-cost solution for RF applications that require high gain and good isolation levels. It has a wide bandwidth and low distortion, making it ideal for use in a range of RF and microwave applications.The specific data is subject to PDF, and the above content is for reference
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