MS652S Allicdata Electronics
Allicdata Part #:

MS652S-ND

Manufacturer Part#:

MS652S

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS RF BIPO 25W 2A M123
More Detail: RF Transistor NPN 16V 2A 450MHz ~ 512MHz 25W Chass...
DataSheet: MS652S datasheetMS652S Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 16V
Frequency - Transition: 450MHz ~ 512MHz
Noise Figure (dB Typ @ f): --
Gain: 10dB
Power - Max: 25W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V
Current - Collector (Ic) (Max): 2A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M123
Supplier Device Package: M123
Description

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The MS652S is a family of NPN transistor components designed for RF circuits. It is manufactured by Wolfson Technologies Ltd. The component is mainly used in linear amplifiers and modulators. The component is constructed of two complementary elements; an N-type transistor and a P-type transistor. The component is designed to provide high gain and stability over a wide range of frequencies. This component is ideal for applications such as low noise amplifiers, RF amplifier, video amplifier, and audio power amplifiers.

The MS652S is a bipolar transistor, meaning that it has both an N-type and a P-type. The component has three pins, called emitter, base, and collector. These pins are also referred to as the active layer, control layer, and output layer. The active layer is used to control the operation of the transistor. The control layer is used to determine the amount of current that the transistor will conduct. The output layer is used to provide the output current of the device. The MS652S utilizes an N-type material for the collector and a P-type material for the base.

The working principle of the MS652S is based on the principles of thermodynamics. The component works by converting thermal energy into electrical energy. When the base of the transistor is energized with a voltage, it causes the temperature of the collector to increase. As the collector temperature increases, the electrons in the collector are attracted towards the base, and a current is produced. This current is then amplified to produce the desired output voltage.

The MS652S has a number of advantages over other types of transistors. One of the main advantages is its high gain. The MS652S has a gain of up to 25 times that of other transistors. This higher gain makes it an ideal choice for applications requiring a high degree of sensitivity. Additionally, the MS652S is capable of operating at temperatures up to 175°C, making it suitable for use in high temperature environments. Finally, the MS652S is resistant to breakdown and is capable of providing stable output over a wide range of frequencies.

The MS652S is a versatile component that is well suited for use in linear amplifiers and modulators. It is also ideal for use in low noise amplifiers, RF amplifier, video amplifier, and audio power amplifiers. The high gain and stability offered by the MS652S make it an ideal choice for these applications. The MS652S is an excellent choice for applications requiring high gain, high stability, and high temperature operation.

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