Series:	--
Part Status:	Obsolete
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	65V
Frequency - Transition:	1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f):	--
Gain:	8dB
Power - Max:	400W
DC Current Gain (hFE) (Min) @ Ic, Vce:	15 @ 1A, 5V
Current - Collector (Ic) (Max):	12A
Operating Temperature:	250°C
Mounting Type:	Chassis Mount
Package / Case:	M218
Supplier Device Package:	M218

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MSC1175MA Application Field and Working Principle

Introduction

MSC1175MA is a special type of bipolar junction transistor (BJT) that specializes in high frequency applications, such as radio frequency (RF) communication. It provides high frequency performance, including gain up to 18dB, with minimum power consumption. This makes it suitable for a wide range of applications, from low power consumer electronics to high-end military, industrial and automotive electronics systems. The MSC1175MA is a “wideband” BJT, meaning that it is optimized for frequencies up to 1GHz.

Application Fields

MSC1175MA can be used in a variety of applications, such as low noise amplifiers, RF power output amplifiers and RF power amplifiers for consumer, industrial and military electronics. Low noise applications are especially well suited for this device as it offers a high gain up to 18dB. This means that the noise level is minimized and the signal is maximized for improved performance. Due to its wideband capabilities, it is also well suited for use in RF power output amplifiers, where it can provide up to 40 Watts of power output.In addition, MSC1175MA is suitable for use in automotive electronics, such as advanced driver assistance systems (ADAS), where it can be used as an amplifier in the radar and laser systems. The device also has an exceptionally high reliability rating, making it suitable for use in high-end military, industrial and automotive electronics systems.

Working Principle

The working principle of the MSC1175MA is based on the basic operation of the BJT, where it amplifies electrical signals. In a BJT, the current flowing through the emitter–base junction is controlled by the current flowing through the base–collector junction. This is known as the current gain of the device and is denoted as hFE. The MSC1175MA has an hFE of up to 500, making it an ideal device for use in high frequency applications.The MSC1175MA also has a high power gain, which is denoted as Gp. Gp is the ratio of the output power of the device to the input power. The MSC1175MA has a Gp of up to 18dB, which makes it ideal for use in RF power amplifiers, where high power gains are required.Finally, the device has an exceptionally high linear gain, making it suitable for use in radio frequency (RF) communication systems. Linear gain is the ratio of the output signal power level to the input signal power level. The MSC1175MA has a linear gain of up to 20dB, which is much higher than most other BJTs available today. This high level of linear gain makes it particularly well suited for cell phone and other communication systems.

Conclusion

In conclusion, the MSC1175MA is a special type of bipolar junction transistor (BJT) that is specially designed for high frequency applications. It offers a high frequency performance, including gain up to 18dB, with minimum power consumption. This makes it highly suitable for a wide range of applications, including low noise amplifiers, RF power output amplifiers and RF power amplifiers for consumer, industrial and military electronics. In addition, the device has an exceptionally high reliability rating, making it well suited for use in high-end military, industrial and automotive electronics systems.

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