Allicdata Part #: | 1086-7998-ND |
Manufacturer Part#: |
MSMBJ100CAE3 |
Price: | $ 0.76 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | TVS DIODE 100V 162V DO214AA |
More Detail: | N/A |
DataSheet: | MSMBJ100CAE3 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
794 +: | $ 0.68981 |
Voltage - Clamping (Max) @ Ipp: | 162V |
Supplier Device Package: | SMBJ (DO-214AA) |
Package / Case: | DO-214AA, SMB |
Mounting Type: | Surface Mount |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | General Purpose |
Power Line Protection: | No |
Power - Peak Pulse: | 600W |
Current - Peak Pulse (10/1000µs): | 3.7A |
Series: | Military, MIL-PRF-19500 |
Voltage - Breakdown (Min): | 111V |
Voltage - Reverse Standoff (Typ): | 100V |
Bidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Bulk |
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An MSMBJ100CAE3 is a transient voltage suppressor (TVS) diode. Its application areas are wide-ranging, and primarily involve surge protection. It is intended for use in sensitive electronics, where a sudden voltage spike could otherwise cause short circuiting.
TVS diodes, including the MSMBJ100CAE3, function by clamping the voltage to a predetermined level. When a voltage spike occurs, the diode conducts current. This current is diverted away from sensitive components, thus serving to protect the integrity of electronic circuits. Voltage spikes can be caused by a variety of external influences including lightning, cell phones, wheeled machinery or other sources of EMI.
The MSMBJ100CAE3 has a maximum voltage of 100 volts. It is rated as 10 watts. This means that it is suitable for use in situations where currents of up to 10 watts are expected. It is also rated as a three-terminal device, meaning that it includes three connections for the positive and negative voltage lines and the ground line.
The working principle of the MSMBJ100CAE3 is simple and effective. It is designed to detect rapid rise times of 3-10 nanoseconds. If a voltage exceeding its VBR (breakdown voltage) is detected, it will activate a series of zener diodes connected in parallel, which will limit the current flow to a safe level. Furthermore, the small voltage drops to the diodes enable them to quickly dissipate the excess energy that would otherwise be damaging to the circuit, effectively protecting the components from getting damaged.
This is accomplished by the avalanche breakdown mechanism, in which electrons tunnel through a PN junction and become accelerated. They then impact with the neutral atoms of an adjacent PN junction, emitting further electrons. This process continues until the excess voltage is depleted.
In the case of MSMBJ100CAE3, the peak pulse power rating is 500W, which makes it well suited to protect low capacitance circuits as well as large current flows, meaning that it is suitable for use in many different applications. It is also particularly effective for protecting power supplies, as its peak-to-valley response time of 5 nanoseconds is fast enough to detect and limit transient voltage spikes.
In summary, the MSMBJ100CAE3 is a protective diode which is widely used in the electronics industry for protecting sensitive circuits from voltage spikes. It works by clamping voltages to a predetermined level, and deters current flow, thereby minimising the risk of damage to the underlying components.
The specific data is subject to PDF, and the above content is for reference
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