MSMBJ45CA/TR Circuit Protection |
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Allicdata Part #: | MSMBJ45CA/TRMS-ND |
Manufacturer Part#: |
MSMBJ45CA/TR |
Price: | $ 0.92 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | TVS |
More Detail: | N/A |
DataSheet: | MSMBJ45CA/TR Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
700 +: | $ 0.84506 |
Current - Peak Pulse (10/1000µs): | 8.3A |
Supplier Device Package: | SMBJ (DO-214AA) |
Package / Case: | DO-214AA, SMB |
Mounting Type: | Surface Mount |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | General Purpose |
Power Line Protection: | No |
Power - Peak Pulse: | 600W |
Series: | Military, MIL-PRF-19500 |
Voltage - Clamping (Max) @ Ipp: | 72.7V |
Voltage - Breakdown (Min): | 50V |
Voltage - Reverse Standoff (Typ): | 45V |
Bidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
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Transient voltage suppression diodes (TVS - Diodes) are widely used for a variety of transient protection applications due to their superior characteristics. Among them, the MSMBJ45CA/TR from ON semiconductor is a highly popular transient voltage suppression diode. It is a bi-polar, low capacitance, radial leaded part designed for increased ESD (electrostatic discharge) protection.
The MSMBJ45CA/TR has an operating temperature range of -55°C to 125°C, a capacitance of 9.2pF typical at 4V, and a maximum peak pulse power dissipation of 1500W at 10/1000μs. The device is also RoHS compliant and has an approximate stand-off voltage of 45V.
The application fields of the MSMBJ45CA/TR include consumer electronics, audio/video equipment, personal digital assistants, cellular phones, telecom equipment, medical equipment, automotive applications as well as home appliance control boards. It is suitable for protecting these types of equipment from transient overvoltage caused by any external or internal disturbances such as ESD, lightning, electro-magnetic interference, and electro-motive force.
The working principle of the MSMBJ45CA/TR is mainly based on its design. The device is composed of two silicon junctions, and both of them act as a closed loop junction-diode. The breakdown voltage is determined by the ratio of the diodes’ reverse leakage to the reverse avalanche current multiplied by the diode’s distributed capacitance. The device also has multiple layers of protection, which helps to minimize voltage spike, reduce Vns, and provide excellent ESD protection. Moreover, the device is designed with a low capacitance, which can minimize noise caused by the device.
When the device is subjected to an overvoltage, the device will absorb energy during the transient condition. This allows the voltage to be diverted, redirected, and dissipated by the device. As the voltage on the device is reduced, it will reach a voltage level known as the hold-off voltage. At this point, the pulse current will be completely discharged, reducing its duration and allowing the device to return to normal operating conditions.
The MSMBJ45CA/TR is a popular choice for transient protection applications due to its superior performance characteristics. Its low capacitance and multiple layers of protection make it preferable to many other transient protection devices. Its application fields span a wide range, including consumer electronics, automotive applications, and medical equipment. Moreover, its working principle is based on its design, which allows it to divert energy and redirect transient overvoltages. Therefore, the MSMBJ45CA/TR is the ideal choice for transient protection applications.
The specific data is subject to PDF, and the above content is for reference
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MSMBG17CAE3 | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 17V 27.6V DO215... |
MSMBG18CAE3 | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 18V 29.2V DO215... |
MSMBG20CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 20V 32.4V DO215... |
MSMBG20CAE3 | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 20V 32.4V DO215... |
MSMBG22CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 22V 35.5V DO215... |
MSMBG22CAE3 | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 22V 35.5V DO215... |
MSMBG24CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 24V 38.9V DO215... |
MSMBG24CAE3 | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 24V 38.9V DO215... |
MSMBG26CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 26V 42.1V DO215... |
MSMBG26CAE3 | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 26V 42.1V DO215... |
MSMBG28CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 28V 45.4V DO215... |
MSMBG28CAE3 | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 28V 45.4V DO215... |
MSMBG30CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 30V 48.4V DO215... |
MSMBG30CAE3 | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 30V 48.4V DO215... |
MSMBG33CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 33V 53.3V DO215... |
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MSMBG36CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 36V 58.1V DO215... |
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