MSMBJ45CA/TR Allicdata Electronics

MSMBJ45CA/TR Circuit Protection

Allicdata Part #:

MSMBJ45CA/TRMS-ND

Manufacturer Part#:

MSMBJ45CA/TR

Price: $ 0.92
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS
More Detail: N/A
DataSheet: MSMBJ45CA/TR datasheetMSMBJ45CA/TR Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
700 +: $ 0.84506
Stock 1000Can Ship Immediately
$ 0.92
Specifications
Current - Peak Pulse (10/1000µs): 8.3A
Supplier Device Package: SMBJ (DO-214AA)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 600W
Series: Military, MIL-PRF-19500
Voltage - Clamping (Max) @ Ipp: 72.7V
Voltage - Breakdown (Min): 50V
Voltage - Reverse Standoff (Typ): 45V
Bidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Description

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Transient voltage suppression diodes (TVS - Diodes) are widely used for a variety of transient protection applications due to their superior characteristics. Among them, the MSMBJ45CA/TR from ON semiconductor is a highly popular transient voltage suppression diode. It is a bi-polar, low capacitance, radial leaded part designed for increased ESD (electrostatic discharge) protection.

The MSMBJ45CA/TR has an operating temperature range of -55°C to 125°C, a capacitance of 9.2pF typical at 4V, and a maximum peak pulse power dissipation of 1500W at 10/1000μs. The device is also RoHS compliant and has an approximate stand-off voltage of 45V.

The application fields of the MSMBJ45CA/TR include consumer electronics, audio/video equipment, personal digital assistants, cellular phones, telecom equipment, medical equipment, automotive applications as well as home appliance control boards. It is suitable for protecting these types of equipment from transient overvoltage caused by any external or internal disturbances such as ESD, lightning, electro-magnetic interference, and electro-motive force.

The working principle of the MSMBJ45CA/TR is mainly based on its design. The device is composed of two silicon junctions, and both of them act as a closed loop junction-diode. The breakdown voltage is determined by the ratio of the diodes’ reverse leakage to the reverse avalanche current multiplied by the diode’s distributed capacitance. The device also has multiple layers of protection, which helps to minimize voltage spike, reduce Vns, and provide excellent ESD protection. Moreover, the device is designed with a low capacitance, which can minimize noise caused by the device.

When the device is subjected to an overvoltage, the device will absorb energy during the transient condition. This allows the voltage to be diverted, redirected, and dissipated by the device. As the voltage on the device is reduced, it will reach a voltage level known as the hold-off voltage. At this point, the pulse current will be completely discharged, reducing its duration and allowing the device to return to normal operating conditions.

The MSMBJ45CA/TR is a popular choice for transient protection applications due to its superior performance characteristics. Its low capacitance and multiple layers of protection make it preferable to many other transient protection devices. Its application fields span a wide range, including consumer electronics, automotive applications, and medical equipment. Moreover, its working principle is based on its design, which allows it to divert energy and redirect transient overvoltages. Therefore, the MSMBJ45CA/TR is the ideal choice for transient protection applications.

The specific data is subject to PDF, and the above content is for reference

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