MSMBJSAC50

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The MSMBJSAC50 is a TVS-Diodes feature high-power protection of sensitive devices against ESD. TVS-Diodes protect high-power systems from pulses of short duration, and provide over-voltage suppression. The MSMBJSAC50 features fast response times of less than 1 ns, low capacitance and low leakage current. This makes it suitable for sensitive industrial and consumer applications.

The TVS-diodes feature high-voltage and current capability. They are used to divert transient voltage and current away from vulnerable systems. TVS-Diodes can be used to protect sensitive systems such as computers, electronic subsystems, and communication equipment from power surges, lightning strikes, and Electro-static Discharge (ESD). They are also capable of protecting large systems such as electricity grids and big industrial facilities against transient events.

The working principle of the MSMBJSAC50 is based on the breakdown of the reverse junction of PN-diode. This PN-diode is reverse-biased to a certain breakdown voltage level, such that the junction can withstand higher reverse voltages for a short period. When an over-voltage surge is introduced, the junction breaks down and a conduction path is created, diverting the surge away from sensitive circuitry and components. By suppressing the surge before it can reach the vulnerable devices, TVS-diodes can limit the amount of damage caused by the surge.

The MSMBJSAC50 is capable of handling high transient and maximum surge current up to 25 Amps @10/1000 μs. It can also handle high transient peak power of 1kW for a 10/1000 μs pulse width, and has a maximum leakage current of 2 μA.

The MSMBJSAC50 is made using a Dual N-channel construction that features low impedance between the channels. This offers protection against ESD, lightning strikes and other transient events. The device is leadless and RoHS compliant and is designed with availability in mind at high power levels.

In summary, the MSMBJSAC50 is a high-power TVS-diode suitable for sensitive industrial and consumer applications. It features fast response times of less than 1 ns, low capacitance and low leakage current. It is capable of handling high transient and maximum surge current up to 25 Amps @10/1000 μs, and has a maximum leakage current of 2 μA. It is made using a Dual N-channel construction that features low impedance between the channels and it is designed with availability in mind at high power levels.

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