MT36HTJ51272Y-40ED2

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Memory - Modules: MT36HTJ51272Y-40ED2 application field and working principle

MT36HTJ51272Y-40ED2 is a dynamic random-access memory (DRAM) module manufactured by Micron Technology Inc. As a form of computer memory, DRAM modules are used in personal computers, laptop computers, and servers to strengthen physical memory. The MT36HTJ51272Y-40ED2 is a high-end DRAM module that is designed to be used in data-intensive applications. It is composed of eighteen 1-gigabit (Gb) DDR3 components arranged in 18-rank x 72-bit (18x72) configuration.

The main purpose of the MT36HTJ51272Y-40ED2 is to provide energy-efficient and reliable memory capacity. It has a data rate of 1600MT/s and a density of 112Gb, with active/idle power consumption of just 0.37W/0.13W. It can provide a power-optimized application environment, which helps to conserve energy during data application operations.

The MT36HTJ51272Y-40ED2 is used in applications such as gaming consoles, multimedia editing and streaming, and machine vision and visualization. Its speed and capacity make it well-suited for data intensive applications. The module is also employed in areas such as aerospace, automotive, and robotics, where reliable performance is necessary.

In order to provide reliable performance, the MT36HTJ51272Y-40ED2 is equipped with advanced error-correction algorithms, diagnostic tools and self-refreshing capabilities. The module is also designed using sophisticated circuitry, which helps to ensure that data is accurately stored and retrieved. The module also uses a special pre-fetch mechanism to further improve its performance.

The working principle of the MT36HTJ51272Y-40ED2 is based on the concept of row-column addressing. It uses the row address strobe (RAS) and column address strobe (CAS) signals to access designated memory locations. The CAS signal is used to identify columns, and the RAS signal is used to identify rows in the memory array. Once these signals are asserted, the data is accessed from the associated row-column memory location.

In order to access data from the memory, the address signals must first be decoded. This is done using two separate RAM chips, which are responsible for decoding the address signals. Once the address is received, the RAM chips generate the corresponding row and column addresses that are then inputted into the memory array.

Once the address is decoded, the data is retrieved using the RAS and CAS signals. The selected row is actuated first and then the selected column address is read. The data stored in the selected column is then read and outputted into a buffer register.

The MT36HTJ51272Y-40ED2 is designed to work in an energy-efficient manner and provide reliable performance in data-intensive applications. Its advanced error-correction algorithms, diagnostic tools, and pre-fetch mechanism ensure that the data is accurately stored and retrieved. Its row-column addressing system and RAM decoding chips further improve its performance, making it suitable for gaming consoles, multimedia editing and streaming, and machine vision and visualization.

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