Allicdata Part #: | MT38W1011A90YZQXZI.XB8-ND |
Manufacturer Part#: |
MT38W1011A90YZQXZI.XB8 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | PARALLEL/PSRAM 48M |
More Detail: | Memory IC |
DataSheet: | MT38W1011A90YZQXZI.XB8 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | * |
Part Status: | Obsolete |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Memory is a fundamental component in any electronic device. It is responsible for storing data and instructions, helping the system to run more efficiently. The MT38W1011A90YZQXZI.XB8 is a type of memory that is used for many applications in a variety of fields. In this article, we will explore the applications and working principles of the MT38W1011A90YZQXZI.XB8.
Applications of MT38W1011A90YZQXZI.XB8
The MT38W1011A90YZQXZI.XB8 is a versatile memory component, which is used in a wide range of applications. The most common uses of the component are in mobile devices and other embedded systems. It is often used as an volatile memory component, allowing the device to store and access data quickly. Additionally, the MT38W1011A90YZQXZI.XB8 is suitable for low voltage operation, so it is often used in battery-powered systems.
The component is also used in medical and industrial applications, as it is highly reliable and provides high-speed performance. It is commonly used for applications such as data acquisition, measure control, and health monitoring. Additionally, the component is suitable for automotive applications, where it can be used for electronic control, navigation, and communications.
Working Principle of MT38W1011A90YZQXZI.XB8
The MT38W1011A90YZQXZI.XB8 is a 3.3V integrated memory component, which has a voltage range of 1.65-3.6V. The component is made up of 256M bit of Silicon Oxide Nitride Oxide Silicon (SONOS) architecture. It consists of a memory cell array and peripheral logic blocks. The memory cell array is made up of 2M rows, and 256 columns. Each row consists of 16 memory cells, which are connected by floating gate transistors. This makes it possible to store data consistently.
The peripheral logic blocks are responsible for controlling the read and write operations of the cells. The control logic also manages the timings of the operations, as well as the error detection and correction. The data is transferred to and from the memory cells via a series of input/outputs (I/O). The I/O pins are used to transmit data to and from the component, allowing it to interface with external devices.
Conclusion
The MT38W1011A90YZQXZI.XB8 is a versatile memory component, which is used in a wide range of applications. It is perfect for low voltage operation and its SONOS architecture makes it reliable and fast. Additionally, its I/O pins make it easy to interface with external devices. With its wide range of applications and working principle, the MT38W1011A90YZQXZI.XB8 is a great choice for many types of applications.
The specific data is subject to PDF, and the above content is for reference
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