MT4VDDT3264AY-40BJ1 Allicdata Electronics
Allicdata Part #:

MT4VDDT3264AY-40BJ1-ND

Manufacturer Part#:

MT4VDDT3264AY-40BJ1

Price: $ 27.04
Product Category:

Memory Cards, Modules

Manufacturer: Micron Technology Inc.
Short Description: MODULE DDR SDRAM 256MB 184UDIMM
More Detail: Memory Module DDR SDRAM 256MB 400MT/s 184-UDIMM
DataSheet: MT4VDDT3264AY-40BJ1 datasheetMT4VDDT3264AY-40BJ1 Datasheet/PDF
Quantity: 1000
100 +: $ 24.58230
Stock 1000Can Ship Immediately
$ 27.04
Specifications
Series: --
Part Status: Obsolete
Memory Type: DDR SDRAM
Memory Size: 256MB
Speed: 400MT/s
Package / Case: 184-UDIMM
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The MT4VDDT3264AY-40BJ1 is a dual rank, unbuffered memory module. It is designed for use in servers, workstations and high-end consumer applications. The module features a 256-bit data bus width, up to 2 GB of addressable DDR3 SDRAM, and dual 800 MHz memory busses. The module operates at a maximum of 1.35 Volts, and it is compatible with both JEDEC and Intel/ AMD memory technologies.

The MT4VDDT3264AY-40BJ1 is designed for high performance applications such as gaming and streaming media. It is ideal for media content creation, streaming media applications, and applications that require large amounts of memory capacity. It is also ideal for server virtualisation and data center applications.

The module has two ranks of memory, each with its own set of SDRAM chips. The module has a 256-bit data bus and uses double data rate (DDR3) SDRAM chips. This allows the module to run at a much higher clock frequency, up to a rated speed of 800 MHz. The module supports up to 2 GB of addressable DDR3 SDRAM with a 256-bit data bus. The module also has an additional 32-bit parity channel to ensure data integrity.

The MT4VDDT3264AY-40BJ1 also offers a number of additional features which make it suitable for various applications. It supports error correcting code (ECC) to detect and correct any errors that may occur during the reading and writing of data to and from the module. It also supports dynamic random access memory (DRAM) self-refresh to reduce power consumption. Finally, it supports thermal sensor technology which monitors and controls power consumption.

The working principle of the MT4VDDT3264AY-40BJ1 is based on a synchronous dynamic random access memory (SDRAM) architecture. This type of architecture uses a synchronous design which allows all the memory cells to be accessed at the same time, or within a given clock cycle. Data is stored in the memory cells using the electrical charge on a capacitor. When a read or write command is issued, the voltage on the capacitor is read and written to. The entire process is synchronized to the clock signal, allowing the memory cells to be accessed on a regular basis.

The MT4VDDT3264AY-40BJ1 memory module is designed for applications that require high-speed access and maximum memory capacity. This module is suitable for servers, workstations, and high-end consumer applications such as gaming and streaming media. The module is also ideal for media content creation, server virtualization, and data center applications. This module is backed by a limited lifetime warranty from its manufacturer.

The specific data is subject to PDF, and the above content is for reference

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