MT61K256M32JE-14:A TR Allicdata Electronics
Allicdata Part #:

MT61K256M32JE-14:ATR-ND

Manufacturer Part#:

MT61K256M32JE-14:A TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC RAM 8G PARALLEL 1.75GHZ
More Detail: SGRAM - GDDR6 Memory IC 8Gb (256M x 32) Parallel 1...
DataSheet: MT61K256M32JE-14:A TR datasheetMT61K256M32JE-14:A TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: RAM
Technology: SGRAM - GDDR6
Memory Size: 8Gb (256M x 32)
Clock Frequency: 1.75GHz
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 1.31 V ~ 1.39 V
Operating Temperature: 0°C ~ 95°C (TC)
Description

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Memories are some of the most important components in any electronic device. They store a variety of data and information, allowing the device to operate quickly and accurately. MT61K256M32JE-14 is a type of memory that has become increasingly popular for TR applications. It is a high-speed, low-power memory device consisting of 32 million bits of random access memory (RAM). This article will discuss the application fields and working principles of MT61K256M32JE-14.

The MT61K256M32JE-14 is designed for a variety of traditional applications such as audio and video streaming, data processing, and storage. It is capable of transferring up to 3.2 gigabytes per second and can operate at a frequency of up to 800 MHz. Its low power consumption and high performance make it a desirable choice for TR applications, where power and speed are critical. The MT61K256M32JE-14 is also available in several sizes, ranging from 8KB to 4MB, allowing users to select the best memory size and capacity for their application.

The working principle of the MT61K256M32JE-14 is based on the principle of dynamic random access memory (DRAM). This type of memory works by storing data in memory cells, which are connected to rows and columns. Data is stored in the cells as charge levels and a sense amplifier reads the charge levels in order to determine what data is stored. This type of memory is fast, but it has a relatively high power consumption. Additionally, data must be refreshed periodically to ensure that it is not lost.

The MT61K256M32JE-14 has several additional features that make it attractive for TR applications. It utilizes a special feature called “stall mode”, which allows data to be transferred to the memory safely and securely, even when power is removed. This ensures that data is not lost in the event of a power failure. Additionally, this memory device has an integrated error correction code (ECC) that helps to detect and correct errors in the data. This provides greater reliability and accuracy when compared to traditional DRAM.

In conclusion, the MT61K256M32JE-14 is a high-speed, low-power memory device that is well-suited for a variety of traditional and TR applications. Its low power consumption, large capacity, and integrated ECC make it an ideal choice for applications where speed and accuracy are critical. The working principle of the MT61K256M32JE-14 is based on DRAM, where data is stored in memory cells that are connected to rows and columns. This type of memory provides fast data transfer and enhanced reliability, making it an excellent choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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